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Feedback on operational experience and scientific achievements is highly valued for steady product improvement and advice to the customer.
The following references are sorted by product and present a selection of publications based on the use of components from MBE-Komponenten GmbH.


  
 

Publications based on samples grown with SUSI

  1. Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
    L. Oberbeck, N.J. Curson, M.Y. Simmons, R. Brenner, A.R. Hamilton, S.R. Schofield; Appl. Physics Letters 82, 17 (2002)
  2. Comparison of P and Sb as n-dopants for Si molecular beam epitaxy
    J.F. Nützel and G. Abstreiter; Journal of Applied Physics 78, 937-940 (1995)
  3. Microscopic symmetry properties of (001) Si/Ge monolayer superlattices
    K. Eberl, W. Wegscheider, R. Schorer, G. Abstreiter; Physical Review B-Condensed Matter, (1991) 43, 6, pp. 5188-5191
  4. Group-IV element (Si, Ge and alpha-Sn) superlattices - low-temperature MBE
    K. Eberl, W. Wegscheider, G. Abstreiter; Journal of Crystal Growth (1991) vol. 111, no. 1-4, pp. 882-888
  5. Transmission electron-microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates
    W. Wegscheider, K. Eberl, H. Cerva, H. Oppolzer; Appl. Physics Letters (1989) vol. 55, no. 5, pp. 448-450

Publications about C-doping in III/V MBE with SUKO-D

  1. Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm² /Vs
    C. Gerl, S. Schmult, H.-P. Tranitz, C. Mitzkus, W. Wegscheider; Appl. Phys. Letters (2005) 86 25, 2105; 86 20, 2105
  2. 1.3 µm GaInAsN Laserdiodes with improved High Temperature Performance
    M. Fischer, D. Gollub, A. Forchel; Jpn.J.Appl.Phys.Vol.41 (2002) pp. 1162-1163
  3. Near-Band-Edge Photoluminescence from Pseudomorphic Si 1-y C y /Si Quantum Well Structures
    K. Brunner, K. Eberl, W. Winter; Physical Review Letters (1996) Vol 76,2
  4. Heavy carbon doping of GaAs grown by solid source molecular--beam epitaxy
    C. Cianni, A. Fischer, C. Lange, K. Ploog and L. Tapfer; Appl. Phys. Lett.(1992) 61,2 pp 183
  5. Growth and strain compensation effects in the ternary Si 1-x-y G x C y alloy system
    K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang, F.K. Legoues; Appl. Physics Letters,(1992) 60
  6. Synthesis of Si 1-y C y alloys by molecular-beam epitaxy
    S.S. Iyer, K. Eberl, M.S. Goorsky, F.K. Legoues, J.C. Tsang, F. Cardone; Appl. Physics Letters,(1992) 60,3, pp.356

Publications about the preparation of Si1-xCx and Si1-x-yGexCy alloys on Si with SUKO

  1. Photolum. of tensile strained, exactly strain compensated, and compressively strained Si 1-x-y Ge x C y Layers on Si
    O.G. Schmidt, K. Eberl; Physical Review Letters (1998) vol.80, no.15, p.3396-9
  2. K. Brunner et al., Phys.Blätter 52,1237(1996)
  3. K. Brunner et al., Phys.Rev.Lett. 72,303(1996)
  4. H. J. Osten, et al., Appl. Phys. Lett. (1994) / MBE Conf. 1994 Osaka
  5. K. Eberl et al., Appl. Phys. Lett. 64, 739 (1994)
  6. K. Eberl et al., J. V. S. Techn. B10, 934 (1992)
  7. K. Eberl et al., Appl. Phys. Lett. 60, 3033 (1992)
  8. S.S. Iyer et al., Appl. Phys. Lett. 60, 359 (1992)

References for Phosphorus Source DECO

  1. The InP (001)(2x1)Surface:A hydrogen terminated structure
    O.G. Schmidt et al.; Phys. Rev. Lett.90, 126101 (2003)
  2. MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
    H. Künzel, J. Böttcher, P. Harde, R. Maessen; Journal of Crystal Growth 175/176 (1997) 940-944
  3. Nanoscale InP islands embedded in InGaP
    A. Kurtenbach et al.; Appl. Phys. Lett. 69,361 (1996)
  4. Optical gain and lasing in self-assembled In/GaInP quantum dots
    A. Moritz et al.; Appl. Phys. Lett. 69(2), 212,(1996)
  5. Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP source
    T. Shitara, K. Eberl, J. Dickmann, C. Wölk; Journal of Crystal Growth 150 (1995) 1261-1265
  6. Heavy phosphorus doping in mbe grown silicon with a GaP decomposition source
    G. Lippert et al.; Appl. Phys. 66 (23)3197 (1995)

Publications about P-doping in Si MBE with DECO-D

  1. P-delta-doping in Si MBE; C. Tolksdorf, I. Eisele,Uni-BW Munich; to be published
  2. G. Lippert et al.; Appl. Phys. Lett. 66, 3197(1995)
  3. R. Duschel, O.G. Schmidt, G. Reitemann, E. Kasper, K. Eberl; Electronics Letters 35, 1111(1999)

Some publications based on samples prepared with ISES

  1. Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching
    S. Kiravittaya, R. Songmuang, N.Y. Jin-Phillipp, S. Panyakeow, O.G. Schmidt; J.Cryst Growth 251: 258-263 (2003)
  2. Formation of lateral quantum dot molecules around self-assembled nanoholes
    R. Songmuang, S. Kiravittaya, O.G. Schmidt; APL 82 No.17: 2892-2894 (2003)
  3. In-situ etching and regrowth in III/V MBE for future nanotechnology
    H. Schuler, M. Keller, M. Lipinski, K. Eberl, J. Weis, K. v. Klitzing; J. Vac. Sci. Technol 15: (2) 169-177 (Feb 2000)
  4. Systematic growth studies of narrow constrictions formed by molecular beam epitaxy on…
    M. Lipinski, H. Schuler, P. Veit, K.. Eberl; MAT SCI ENG B-SOLID 74: (1-3) 25-31 (May 1 2000)
  5. In situ etching and regrowth in III-V molecular beam epitaxy for future nanotechnology
    H. Schuler, M. Keller, M. Lipinski, K. Eberl; J. Vac. Sci. Technol B 18: (3) 1557-1561 (May-Jun 2000)
  6. In situ etching with AsBr3 and regrowth in molecular beam epitaxy
    H. Schuler, T. Kaneko, M. Lipinski and K. Eberl; Semicond. Sci. Technol. 15, 169 (2000)
  7. Atomic layer in-situ etching and MBE-regrowth
    K. Eberl, M. Lipinski, H. Schuler; J CRYST GROWTH 202: 568-573 (May 1999)
  8. Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching
    H. Schuler and K. Eberl; Microelectronics Journal 30, 341 (1999)
  9. Size modification of self-assembled InAs quantum dots by in-situ etching
    H. Schuler, N.Y. Jin-Phillipp, F. Phillipp, K. Eberl; Semiconductor Science and Technol. 13, 1341 (1998)
  10. The effect of surface reconstruction on the surface morphology during in-situ etching
    M. Ritz, T. Kaneko, K. Eberl; Appl.Phys. Lett. 71, 695 (1997)
 
 
 

Please ask for a list of users reference on our MBE products, for example effusion cells, manipulators, etc.

  
 
 

 LAST UPDATE: SEPTEMBER, 2010

© 2003 Dr. Eberl MBE-Komponenten GmbH