Dr. Karl Eberl, Publications

Dr. Karl Eberl

List of Publications


  1. A widely tunable few-electron droplet
    A K Huettel, K Eberl and S Ludwig
    Journal of Physics: Condensed Matter 19, 236202 (2007)
  2. Kondo effect in a one-electron double quantum dot: Oscillations of the Kondo current in a weak magnetic field
    D. M. Schröer, A. K. Hüttel, K. Eberl, S. Ludwig, M. N. Kiselev, and B. L. Altshuler
    Physical Review B 74, 233301 (2006)
  3. Spectroscopy of molecular states in a few-electron double quantum dot
    A. K. Hüttel, S. Ludwig, K. Eberl, and J. P. Kotthaus
    Physica E 35, 278 (2006)
  4. Molecular states in a one-electron double quantum dot
    A. K. Hüttel, S. Ludwig, H. Lorenz, K. Eberl, and J. P. Kotthaus
    Physica E 34, 488 (2006)
  5. Direct control of the tunnel splitting in a one-electron double quantum dot
    A. K. Hüttel, S. Ludwig, H. Lorenz, K. Eberl, and J. P. Kotthaus
    Physical Review B 72, 081310(R) (2005)
  6. Nuclear spin relaxation probed by a single quantum dot
    A. K. Hüttel, J. Weber, A. W. Holleitner, D. Weinmann, K. Eberl, and R. H. Blick
    Physical Review B 69, 073302 (2004)
  7. Probing coherent electronic states in double quantum dots
    H. Qin, A. W. Holleitner, A. K. Hüttel, R. H. Blick, W. Wegscheider, M. Bichler, K. Eberl, and J. P. Kotthaus
    physica status solidi (c) 1, 2094 (2004)
  8. Spin blockade in ground state resonance of a quantum dot
    A. K. Hüttel, H. Qin, A. W. Holleitner, R. H. Blick, K. Neumaier, D. Weinmann, K. Eberl, and J. P. Kotthaus
    Europhysics Letters 62, 712 (2003)
  9. Phase coherent transport in two coupled quantum dots
    R. H. Blick, A. K. Hüttel, A. W. Holleitner, E. M. Höhberger, H. Qin, J. Kirschbaum, J. Weber, W. Wegscheider, M. Bichler, K. Eberl and J. P. Kotthaus
    Physica E 16, 76 (2003)
  10. Probing and controlling the bonds of an artificial molecule
    A. W. Holleitner, R. H. Blick, A. K. Hüttel, K. Eberl, J. P. Kotthaus
    Science 297, 70 (2002)
  11. Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes
    M. W. Dashiell, C. Müller, N. Y. Jin-Phillipp, U. Denker, O. G. Schmidt and K. Eberl
    Materials Science and Engineering B 89, 106 (2002)
  12. Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures
    A. T. Winzer, R. Goldhahn, G. Gobsch, H. Heidemeyer, O. G. Schmidt, and K. Eberl
    Physica E 13, 289 (2002)
  13. Transport measurement of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots
    K.-M. Haendel, C. Lenz, U. Denker, O. G. Schmidt, K. Eberl, and R. J. Haug
    Physica E 13, 757 (2002)
  14. Non-specular x-ray reflection from self-organized ripple structures in Si/Ge multilayers
    M. Meduna, V. Holy, J. Stangl, A. Hesse, T. Roch, G. Bauer, O. G. Schmidt, and K. Eberl
    Physica E 13, 1003 (2002)
  15. Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices
    M. Meduna, V. Holý, T. Roch, G. Bauer, O. G. Schmidt, and K. Eberl
    Semiconductor Science and Technology 17, 480 (2002)
  16. Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned GaAs
    Y. Nakamura, O. G. Schmidt, N. Y. Jin-Phillipp, S. Kiravittaya, C. Müller, K. Eberl H. Gräbeldinger, and H. Schweizer
    Journal of Crystal Growth 242, 339 (2002)
  17. Low-Voltage MOBILE Logic Module Based on Si/SiGe Interband Tunnelling Diodes
    U. Auer, W. Prost, F.-J. Tegude, R. Duschl, K. Eberl
    IEEE Electron Device Letters, Vol. 22, No. 5, pp.215-217 (2001)
  18. Photoluminescence and transport measurements in pseudomorphic Si1-yCy and Si1-x-yGexCy ...
    O. G. Schmidt, R. Duschl, and K. Eberl
    Silicon-Germanium Carbon alloys, edited by S. T. Pantelides and S. Zollner (Taylor & Francis, London, 2002), Volume 15, p. 445, ISBN: 1-56032-963-7
  19. Self-assembled semiconductor nanostructures: climbing up the ladder of order.
    O. G. Schmidt, S. Kiravittaya, Y. Nakamura, H. Heidemeyer, R. Songmuang, C. Müller, N. Y. Jin-Phillipp, K. Eberl, H. Wawra, S. Christiansen, H. Gräbeldinger, and H. Schweizer
    Surface Science 514, 10 (2002)
  20. InP/GaInP quantum dot lasers.
    O. G. Schmidt, Y. M. Manz, and K. Eberl
    "Nano-Optoelectronics: Concepts, physics, and dev., ed. M. Grundmann (Springer, Berlin, 2002) p. 339, ISBN: 3-540-43394-5"
  21. Thin solid films roll up into nanotubes.
    O. G. Schmidt and K. Eberl
    Nature 410, 168 (2001)
  22. Effects of hydrostatic pressure on Raman scattering in Ge quantum dots.
    K. L. Teo, L. Qin, I. M. Noordin, G. Karunasiri, Z. X. Shen, O. G. Schmidt, K. Eberl, HJ Queisser
    Physical Review B 63,121306(R)
  23. Electron and hole confinement in stacked self-assembled InP dots of different sizes.
    M. Hayne, J. Maes, Y. M. Manz, O. G. Schmidt, K. Eberl, and V. V. Moshchalkov
    Physica Status Solidi B 224, 31 (2001)
  24. Mesoscopic fast ion conduction in nanometer scale heterostructures
    N Sata, K Eberman, J. Maier and K Eberl
    Nature Vol 408, 21-28, 2000
  25. Trench formation around and between self assembled Ge islands on Si.
    U. Denker, O. G. Schmidt, N. Y. Jin-Phillipp, and K. Eberl
    Applied Physics Letters 78, 3723 (2001)
  26. X-ray reflectivity from self-assembled structures in Ge/Si superlattices.
    M. Meduna, V. Holy, T. Roch, G. Bauer, O. G. Schmidt, K. Eberl
    Journal of Physics D- Applied Physics 34, A193 (2001)
  27. Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots.
    M. Hayne, J. Maes, V. V. Moshchalkov, Y. M. Manz, O. G. Schmidt, and K. Eberl
    Applied Physics Letters, 45 (2001)
  28. Si-based resonant inter- and intraband tunneling diodes.
    K. Eberl, R. Duschl, O. G. Schmidt, U. Denker, and R. Haug
    Journal of Crystal Growth 227, 770 (2001)
  29. Ge-Si nanostructures for quantum-effect electronic devices.
    F. Ernst, O. Kienzle, O. G. Schmidt, K. Eberl, J. Zhu, K. Brunner, and G. Abstreiter
    Institute of Physics Conference Series 169, 167 (2001)
  30. Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio.
    R. Duschl, O. G. Schmidt,,and K. Eberl
    Applied Physics Letters 76, 879 (2000)
  31. Structural properties of SiC and SiGeC alloy layers on Si.
    K. Eberl, O. G. Schmidt, and R. Duschl
    Emis Datareview Series No. 24 (INSPEC, London 2000), p. 75
  32. Electronic properties of SiGeC alloys.
    R. Duschl, O. G. Schmidt, and K. Eberl
    Emis Datareview Series No. 24 (INSPEC, London 2000), p. 158
  33. MBE growth conditions for 1.3 um light emission from InAs quantum dots.
    M. O. Lipinski, N. Y. Jin-Phillipp, O. G. Schmidt, and K. Eberl
    Proceedings of the 12th International Conference on InP and related materials 2000, p. 215
  34. Effect of overgrowth temperature on the photoluminescence of Ge/Si islands.
    O. G. Schmidt, U. Denker, K. Eberl, O. Kienzle, and F. Ernst
    Applied Physics Letters 77, 2509 (2000)
  35. Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy.
    J. Stangl, T. Roch, G. Bauer, I. Kegel, T. H. Metzger, O. G. Schmidt, K. Eberl, O. Kienzle, anf F. Ernst
    Applied Physics Letters 77, 3953 (2000)
  36. Self-assembling InAs and InP quantum dots for optoelectronic devices.
    K. Eberl, M. Lipinski, Y. M. Manz, N. Y. Jin-Phillipp, W. Winter, C. Lange, and O. G. Schmidt
    Thin Solid Films 380, 183 (2000)
  37. Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si islands.
    O. G. Schmidt, K. Eberl, and Y. Rau
    Physical Review B 62, 16715 (2000)
  38. Stain induced intermixing of InAs quantum dots in GaAs
    MO Lipinski, H Schuler, NY Jin-Phillipp, OG Schmidt, K Eberl
    Applied Physics Letters 77, 1789 (2000)
  39. The quantitative characterization of SiGe layers by analysing ....
    J Zipprich, T Füller, F Banhart, OG Schmidt, K Eberl
    J Microscopy Vol 194, 12, 1999
  40. Self and interdiffusion in AlGaAs/GaAs isotope heterostructures
    H Bracht, EE Haller, K Eberl, M Cardona
    APPL PHYS LETT 74, 49, 1999
  41. Effect of overgrowth temperature on the photoluminescence of Ge/Si islands
    OG Schmidt, U Denker, K Eberl, O Kienzle F Ernst
    Appl. Phys. Lett (2000) in press
  42. Self-Assembled Ge/Si Dots for faster field effect transistors
    O.G. Schmidt and K Eberl
    IEEE Transactions on Electron Devices 48, 1175 (2001)
  43. Resonant Raman scattering by acoustical phonons in Ge/Si self assembled quantum...
    M Cazayous, JR Huntzinger, J Groenen, A Mlayah, S Christiansen, OG Schmidt, K Eberl
    Physical Review B 62, 7243 (2000)
  44. Self assembling nanostructures and atomic layer precise etching in MBE
    K Eberl, MK Zundel, H Schuler
    Solid State Ionics 131, 61, 2000
  45. Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands
    OG Schmidt, U Denker, K Eberl, O Kienzle F Ernst, R. Haug
    Applied Physics Letters 77, 4341 (2000)
  46. Quantum dot lasers
    K. Eberl and M.K. Zundel
    Mc Graw hill Yearbook 2000, Science and Technology, 9th Edition
  47. Self-assembling quantum dots for optoelectronic devices on Si and GaAs
    K. Eberl, M. O. Lipinski, Y. M. Manz, W. Winter, N.Y. Jin-Phillipp, O.G. Schmidt
    Physikca E 9, 164 (2001)
  48. Long-range ordered lines of self-assembling Ge islands on a flat Si (100) surface
    Schmidt OG, Jin-Phillipp NY, Lange C, Denker U, Eberl K
    Appl. Phys. Lett. 77, 4139 (2000)
  49. Structural properties of SiC and SiGeC alloy layers on Si
    K. Eberl, O.G. Schmidt and R. Duschl
    "Silicon Germanium an SiGe: Carbon" Ed. E. Kasper and K. Lyutovich emis…
  50. Preparation and optical properties of Ge and C-induced Ge quantum dots on Si
    K. Eberl, O.G. Schmidt, O. Kienzle and F. Ernst
    Mat. Res. Soc. Symp. Proc. Vol 571, 355 (2000)
  51. Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes
    Eberl K, Schmidt OG, Duschl R,
    THIN SOLID FILMS 369: (1-2) 33-38 JUL 3 2000
  52. Field-enhanced Stokes shifts in strained Si1-yCy/Si(001) quantum wells
    Sugawara Y, Fukatsu S, Brunner K, Eberl K.
    THIN SOLID FILMS 369: (1-2) 402-404 JUL 3 2000
  53. Anomalous fluctuations of 2D-electron recombination radiation intensity in the quantum…
    Volkov OV, Kukushkin IV, Lebedev MV, Eberl K. von Klitzing K
    JETP LETT+ 71: (9) 383-386 2000
  54. In situ etching and regrowth in III-V molecular beam epitaxy for future nanotechnology
    Schuler H, Keller M, Lipinski M, Eberl K.
    J VAC SCI TECHNOL B 18: (3) 1557-1561 MAY-JUN 2000
  55. High-pressure photoluminescence studies of pseudomorphic Si1-yCy/Si MQW structures
    Liu ZX, Goni AR, Manz C, Eberl K.
    PHYS STATUS SOLIDI B 219: (1) 103-114 MAY 2000
  56. Absence of odd-even parity behavior for Kondo resonances in quantum dots
    Schmid J, Weis J, Eberl K, von Klitzing K.
    PHYS REV LETT 84: (25) 5824-5827 JUN 19 2000
  57. Room temperature lasing via ground state of current injected vertically alighned InP…
    Y.M. Manz, O.G. Schmidt and K. Eberl
    APPL PHYS LETT 76: (23) 3343-3345 JUN 5 2000
  58. Bistable charge states in a photoexcited quasi-two-dimensional electron-hole system
    Volkov OV, Kukushkin IV, Kulakovskii DV, von Klitzing K, Eberl K.
    JETP LETT+ 71: (8) 322-326 2000
  59. Optical and structural characterization of a self-aligned single electron transitor structure… Bertram F, Lipinski M, Riemann T, von Klitzing K, Eberl K.
    PHYSICA E 7: (3-4) 363-366 MAY 2000
  60. Photoluminescence of monolayer to submonolayer thick GeC on Si (100)
    O. G. Schmidt and K. Eberl
    SEMICOND SCI TECH 15: (4) 399-402 APR 2000
  61. Room temperature I-V characteristics of Si/Si1-xGex/Si interband tunneling diodes
    Duschl R, Schmidt OG, Eberl K
    PHYSICA E 7: (3-4) 836-839 MAY 2000
  62. Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation, Schmidt OG, Eberl K
    PHYS REV B 61: (20) 13721-13729 MAY 15 2000
  63. Coupling of intersubband charge-density excitations to longitudinal-optical phonons in modulation-doped GaAs quantum wells, Haboeck U, Goni AR, Danckwerts M, Eberl K.
    SOLID STATE COMMUN 115: (2) 85-88 2000
  64. Interaction between intersubband Bernstein modes and coupled plasmon-phonon modes
    Kulik LV, Kukushkin IV, Kirpichev VE, von Klitzing K, Eberl K.
    PHYS REV B 61: (19) 12717-12720 MAY 15 2000
  65. Energy shifts of indirect excitons in coupled quantum wells
    Snoke DW, Negoita V, Eberl K
    J LUMIN 87-9: 157-161 MAY 2000
  66. A low-temperature scanning force microscope for investigating buried two-dimensional Weitz P, Ahlswede E, Weis J, von Klitzing K, Eberl K.
    APPL SURF SCI 157: (4) 349-354 APR 2000
  67. Scanning Hall probe microscopy with shear force distance control
    Schweinbock T, Weiss D, Lipinski M, Eberl K.
    J APPL PHYS 87: (9) 6496-6498 Part 3 MAY 1 2000
  68. Systematic growth studies of narrow constrictions formed by molecular beam epitaxy on…
    Lipinski M, Schuler H, Veit P, Eberl K.
    MAT SCI ENG B-SOLID 74: (1-3) 25-31 MAY 1 2000
  69. Reduced critical thickness and photoluminescence line splitting in multiple layers of…
    Schmidt OG, Eberl K, Kienzle O, Frank E.
    MAT SCI ENG B-SOLID 74: (1-3) 248-252 MAY 1 2000
  70. Subhertz spectral fluctuations from high-density excitons in coupled quantum wells
    Negoita V, Hackworth D, Snoke DW, Eberl K.
    OPT LETT 25: (8) 572-574 APR 15 2000
  71. Enhanced vortex damping by eddy currents in superconductor-semiconductor hybrids
    Danckwerts M, Goni AR, Thomsen C, Eberl K.
    PHYS REV LETT 84: (16) 3702-3705 APR 17 2000
  72. Fine structure in the local chemical potential of a two-dimensional-electron system at…
    Huls J, Weis J, von Klitzing K, Eberl K.
    PHYSICA E 6: (1-4) 64-68 FEB 2000
  73. Spatial evolution of the generation and relaxation of excited carriers near the breakdown of the quantum Hall effect Kaya II, Nachtwei G, Sagol BE, Eberl K. Klitzing v.K.
    PHYSICA E 6: (1-4) 128-131 FEB 2000
  74. Hall-potential investigations under quantum Hall conditions using scanning force…
    Weitz P, Ahlswede E, Weis J, K. Eberl, K. v. Klitzing
    PHYSICA E 6: (1-4) 247-250 FEB 2000
  75. Kondo resonances in split-gate quantum dots
    Schmid J, Weis J, Eberl K
    PHYSICA E 6: (1-4) 375-378 FEB 2000
  76. Hole coupling in stacked self-assembled InP quantum dots
    Hayne M, Provoost R, Zundel MK, Eberl K, Mushalkov M.
    PHYSICA E 6: (1-4) 436-439 FEB 2000
  77. Frictional drag between coupled 2D hole gases in GaAs/AlGaAs heterostructures
    Jorger C, Cheng SJ, Dietsche W, Eberl K et al.
    PHYSICA E 6: (1-4) 598-601 FEB 2000
  78. Controlled mechanical AFM machining of two-dimensional electron systems: fabation… Schumacher HW, Keyser UF, Zeitler U, Eberl K. et al.
    PHYSICA E 6: (1-4) 860-863 FEB 2000
  79. Magnetic-field-induced dispersion anisotropy of intersubband excitations in an...
    Kulik LV, Kukushkin IV, Kirpichev VE, K. Eberl et al.
    PHYS REV B 61: (3) 1712-1715 JAN 15 2000
  80. Magnetic field induced metal Semiconductor transitions in narrrow constrictions
    J. Regul P. König, U. Zeitler, R. Haug, K. Eberl
    Ann. Phys. 8 SI 221 (1999)
  81. In-situ etching an regrowth in III/V MBE for future nanotechnology
    H. Schuler, M. Keller, M. Lipinski, K. Eberl, J. Weis and K. v. Klitzing
    J. Vac. Sci. Technol 15: (2) 169-177 FEB 2000
  82. High pressure photoluminescence studies of carbon induced germanium quantum dots…
    Liu Z X, Schmidt O G Venkateswaran U D Eberl K Syassen K
    Semicond. Sci. Technol. 15, 155 (2000)
  83. In situ etching with AsBr3 and regrowth in molecular beam epitaxy
    H. Schuler, T. Kaneko, M. Lipinski and K. Eberl
    Semicond. Sci. Technol. 15, 169 (2000)
  84. Huge density-dependent blueshift of indirect excitons in biased coupled quantum wells,
    Negoita V, Snoke DW, Eberl K
    PHYS REV B 61: (4) 2779-2783 JAN 15 2000
  85. Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature…
    Duschl R, Schmidt OG, Eberl K
    APPL PHYS LETT 76: (7) 879-881 FEB 14 2000
  86. Strong red shift of indirect exciton luminescence in low magnetic field,
    Negoita V, Snoke DW, Eberl K
    SOLID STATE COMMUN 113: (8) 437-441 2000
  87. Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system, Keyser UF, Schumacher HW, Zeitler U, Eberl K et al.
    APPL PHYS LETT 76: (4) 457-459 JAN 24 2000
  88. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes… Schmidt OG, Lange C, Eberl K
    APPL PHYS LETT 75: (13) 1905-1907 SEP 27 1999
  89. Photoluminescence study of the 2D-3D growth mode changeover for different Ge/Si… Schmidt OG, Lange C, Eberl K
    PHYS STATUS SOLIDI B 215: (1) 319-324 SEP 1999
  90. Spatially resolved measurements of hot-electron generation and relaxation at the… Nachtwei G, Kaya II, Sagol BE, Eberl K. et al.
    PHYSICA B 272: (1-4) 127-129 DEC 1999
  91. Linear birefringence in GaAs/AlAs multiple quantum wells
    Sirenko AA, Etchegoin P, Fainstein A, Eberl K. et al
    PHYS STATUS SOLIDI B 215: (1) 241-246 SEP 1999
  92. Nanomachining of mesoscopic electronic devices using an atomic force microscope
    Schumacher HW, Keyser UF, Zeitler U, Eberl K. et al.
    APPL PHYS LETT 75: (8) 1107-1109 AUG 23 1999
  93. Harmonic-potential traps for indirect excitons in coupled quantum wells
    Negoita V, Snoke DW, Eberl K
    PHYS REV B 60: (4) 2661-2669 JUL 15 1999
  94. Properties of two-dimensional electron gas containing self-organized quantum antidots
    Vasilyev Y, Suchalkin S, Zundel M, Eberl K. et al
    APPL PHYS LETT 75: (19) 2942-2944 NOV 8 1999
  95. Spin Polarization of Composite ferminons: Measurements of the Fermi Energy
    I.V. Kukushkin, K. v. Klitzing, K. Eberl
    Phys. Rev. Lett. 82, 3665, 1999
  96. Localization of negatively charged excitons in GaAs/AlGaAs quantum wells
    Volkov OV, Tovstonog SV, Kukushkin IV, Eberl K. et al.
    JETP LETT+ 70: (9) 595-601 NOV 10 1999
  97. Field-enhanced Stokes shifts in tensilely strained carbon-based quantum wells
    Sugawara Y, Fukatsu S, Brunner K, K Eberl
    APPL PHYS LETT 74: (24) 3630-3632 JUN 14 1999
  98. Inelastic light scattering by elementary excitations of the 2D electron gas at high densities
    Goni AR, Danckwerts M, Haboeck U, Eberl K. et al.
    PHYS STATUS SOLIDI B 215: (1) 347-351 SEP 1999
  99. Self-assembling Si/SiGe nanostructures for light emitters
    Eberl K, Schmidt OG, Kienzle O, Ernst F.
    SOLID STATE PHENOM 70: 13-21 1999
  100. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells
    Sirenko AA, Etchegoin P, Fainstein A, Eberl K. et al.
    PHYS REV B 60: (11) 8253-8261 SEP 15 1999
  101. Growth and thermal stability of pseudomorphic GeC/Ge superlattices on Ge
    Duschl, R.; Schmidt, O.G.; Winter, W.; Eberl, K.
    APPL PHYS LETT 74, 1150 1999
  102. Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures
    Bracht H, Norseng M, Haller EE and K. Eberl
    SOLID STATE COMMUN 112: (6) 301-314 1999
  103. Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence…
    Stangl J, Holy V, Mikulik P, Eberl K. et al.
    APPL PHYS LETT 74: (25) 3785-3787 JUN 21 1999
  104. Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures
    Negoita V, Snoke DW, Eberl K
    APPL PHYS LETT 75: (14) 2059-2061 OCT 4 1999
  105. Magnetophotoluminescence of stacked self-assembled InP quantum dots
    Provoost R, Hayne M, Moshchalkov VV, Eberl K
    APPL PHYS LETT 75: (6) 799-801 AUG 9 1999
  106. High room temperature peak to valley current ratio in Si based Esaki diodes
    R. Duschl, O.G. Schmidt, G. Reitemann, E. Kasper and K. Eberl,
    ELECTRON LETT 35: (13) 1111-1112 JUN 24 1999
  107. Direct observation of the intersubband Bernstein modes: Many-body coupling with spin- and charge-density excitations Kirpichev VE, Kulik LV, Kukushkin IV, Eberl K. et al.
    PHYS REV B 59: (20) R12751-R12754 MAY 15 1999
  108. Modified Stranski-Krastanov growth in stacked layers of self-assembling islands
    O.G. Schmidt, O. Kienzle, F. Ernst, Y. Hao and K. Eberl,
    Appl. Phys. Lett. 74, 1272 (1999)
  109. Spectroscopy of hot electron photoluminescence in GaAs/AlAs superlattices
    Sapega VF, Perel VI, Mirlin DN, Eberl K. et al.
    PHYS STATUS SOLIDI B 215: (1) 379-386 SEP 1999
  110. Enhancement of the skyrmionic excitations due to the suppression of Zeeman energy by optical orientation of nuclear spins Kukushkin IV, Von Klitzing K, Eberl K
    PHYS REV B 60: (4) 2554-2560 JUL 15 1999
  111. Optical phonons in isotope superlattices of GaAs, GaP, and GaSb studied by Raman
    Gobel A, Ruf T, Fischer A, Eberl K. et al.
    PHYS REV B 59: (19) 12612-12621 MAY 15 1999
  112. Germanium quantum dots embedded in Silicon: Quantitative study of self-alignment…
    O. Kienzle, F. Ernst, M. Rühle, O.G. Schmidt and K. Eberl,
    Appl. Phys. Lett. 74, 269 (1999)
  113. Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC… O.G. Schmidt and K. Eberl
    Appl. Phys. Lett. 73, 2790 (1998)
  114. Si(1-y)C(y) and Si(1-x-y)Ge(x)C(y) alloy layers
    K. Eberl, K. Brunner and O.G. Schmidt
    Book chapter in "Germanium Silicon Science and Technology" Edided by R. Hull…
  115. Red light emitting InP/GaInP quantum dot injection laser
    M. Zundel, K. Eberl, N.Y. Jin-Phillipp, F. Phillipp, T. Riedl, E. Fehrenbacher, A. Hangleiter
    Appl. Phys. Lett. 73, 1784 (1998)
  116. Injection lasers with with vertically alighned InP/GaInP quantum dots: Dependence of the…
    T. Riedl, E. Fehrenbacher, A. Hangleiter, M. Zundel, K. Eberl
    Jap. J. Appl. Phys. 73, 3730 (1998)
  117. Preparation of red light emitting InP quantum dot injection lasers
    M. Zundel and K. Eberl
    J CRYST GROWTH 202: 1121-1125 MAY 1999
  118. Atomic Layer In-situ Etching and MBE-Regrowth
    K. Eberl Lipinski M and H. Schuler
    J CRYST GROWTH 202: 568-573 MAY 1999
  119. C-induced Ge dots: Enhanced light-output from Si-based nanostructures
    O.G. Schmidt, K. Eberl, and J. Auerswald,
    Thin Solid Films 336, 248 (1998)
  120. C-induced Ge dots: Kinetically limited islanding process prevents coherent verical alignment
    O.G. Schmidt, S. Schieker, and K. Eberl
    Appl. Phys. Lett. 73, 659 (1998)
  121. Size modification of self-assembled InAs quantum dots by in-situ etching
    H. Schuler, N.Y. Jin-Phillipp, F. Phillipp, and K. Eberl
    Semiconductor Science and Technol. 13, 1341 (1998)
  122. Size and shape modification of self-assembled InAs quantum dots and stacked layers..
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  123. Critical currents in quantum Hall conductors with antidot arrays.
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  125. Quantum Hall Effect and Cyclotron Resonance in Disordered Delta doped ...
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  127. Single-electron effects in slim semiconductor superlattices
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  128. Spin transport in GaAs
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  129. SiGeC: Band gaps, band offsets, optical properties, and potential applications.
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  130. Reflectance Difference Spectroscopy of GaAs Asymetric surface quantum wells ...
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  131. Quantum Hall Effect induced by electon electon interaction....
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  132. Photoluminescence measurements of InP quantum dots in pulsed magnetic fields
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  133. InP quantum dots in AlInP/GaInP short period superlattices for red light emitting lasers
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  134. Self-Diffusion in Isotopically controlled heterostructures of elemental and compound sc
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  135. Self-assembled InP quantum dots for red LEDs on Si and injection lasers on GaAs
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  136. Band Alignment of SiGe and SiGeC quantum wells on Si
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  137. Scattering controlled recombination of Delta 2 light hole indirect excitons and...
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  138. Photoluminescence of tensile strained, exactly strain compensated, and compressively…
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  139. Annealing effects on carbon-induced germanium dots in silicon.
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  140. Quasiatomic fine structure and selection rules in quantum dots.
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  141. Observation of finite-thickness effects on the spin-density excitations in quantum wires.
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  142. Magnetic control of electric-field domains in semiconductor superlattices
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  143. Stacked Layers of C-induced Ge quantum dots
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  144. Formation and optical properties of carbon-induced ge dots
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  145. Band alignment in Si1-yCy/Si(001) heterostructures.
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  146. Probing the coherent transport through coupled quantum dots.
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  147. Coupled quantum dots: manifestation of an artificial molecule
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  148. The frictional drag between coupled two-dimensional electronic systems in magnetic fields
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  150. Cyclotron resonance of interacting quantum Hall droplets
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  151. Complex Broadband Millimeter Wave Response of a Double Quantum Dot: Rabi Oscillations in an Artificial Molecule
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  152. Hole mobilities in pseudomorphic SiGeC alloy layers
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  153. Edge spin-density modes in quantum dots in a magnetic field
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  155. Manifestation of commensurate orbits in the magnetoluminescence spectrum of electrons in Kukushkin, I.V.; Weiss, D.(Reprint); Lutjering, G.; Bergmann, R.; Schweizer, H.;…
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  156. Intersubband collective spin- and charge-density excitations in a system of 2D electrons in Kirpichev, V.E.(Reprint); Kukushkin,I.V.; von Klitzing, K.; Eberl, K.
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  157. Fabrication of independently contacted and tuneable 2D-electron-hole systems in
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  159. Cyclotron resonance in asymmetric double quantum wells
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  160. QHE breakdown induced by a single antidot: Coulomb staircase in the breakdown current
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  161. Electron-spin resonance in a quantum dot.
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  162. One-dimensional plasmons in magnetic fields
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  163. Spin exchange between a quantum well and the donor layer in Si/Si1-xCx
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  164. Single-electron transistor as an electrometer measuring chemical potential variations.
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  165. Si1-x-y Ge-x C-y: A new material for future microelectronics?
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  166. Charged and neutral excitonic complexes in GaAs/AlGaAs quantum wells.
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  167. Direct and indirect magnetoexcitons in InxGa1-xAs/GaAs coupled quantum wells…
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  168. Spin-flip Raman scattering in GaAs/AlAs multiple quantum wells
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  169. Magnetoplasmon replica in the recombination radiation spectra of a quasi…
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  170. Near field scanning optical spectroscopy of InP single quantum dots.
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  171. Investigation of electronic structure of InP single quantum dots using near field scanning
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  172. Skipping orbit electron motion in GaAs-AlGaAs quantum wires detected by Raman…
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  173. Structural and optical properties of vertically aligned InP quantum dots
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  174. Characterization of self-assembled Ge islands on Si (100) by atomic force microscopy…
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  175. Influence of pre-deposited carbon on the formation of Ge dots
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    Thin Solid Films (1998), 321, 70-75.
  176. Graded InGaAs/GaAs 1.3µm LED structure grown with MBE
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  177. Formation of carbon-induced Ge dots’ ( 35mal zitiert )
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  178. Evidence for Coulomb staircase in tunneling through an antidot island in the quantum…
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  179. Magnetic field studies of the frictional drag between coupled two-dimensional electronic…
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  180. Manifestation of Commensurate Orbits in the Magnetoluminescence Spectrum of…
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  181. Magneto-optical spectroscopy of two-dimensional holes in GaAs/AlGaAs single
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  182. Spin polarization of two-dimensional electrons in different fractional states and around
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    Phys. Rev. B, 55, 10607, 1997.
  183. Miniband effects on hot-electron photoluminescence polarization in GaAs/AlAs Sapega, V. F.; Perel', V. I.; Dobin, A. Yu.; Mirlin, D. N.; Akimov, I. A.; Ruf, T.; Cardona, M.;…
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  184. Multiple cyclotron resonances in GaAs-AlxGa1-xAs quantum wells detected by resonant
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    Phys. Rev. B: Condens. Matter (1997), 56(3), 1037-1040
  185. Surface acoustic wave scattering in quantum wire arrays: theory and experiment
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  186. Transport spectroscopy in single-electron tunneling transistors
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    Nanotechnology (1996), 7(4), 381-384
  187. Preparation of quantum structures, especially quantum dots and tunnel barriers, and devices Dilger, Markus; Eberl, Karl; Haug, Rolf; von Klitzing, Klaus
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  188. Electron Spin Resonance on a two-dimensional electron gas
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    Phys. Rev. B: Condens. Matter (1997), 56(8), R4359-R4362
  189. TEM and PL studies of self-assembling quantum dots
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  190. Si(1-y)C(y) and Si(1-x-y)Ge(x)C(y) Alloy Layers on Si Substrate
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    Festkörperprobleme/Advances in Solid State Physics (1998), 37, 25-42.
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  192. Atomic Layer Precise Etching with AsBr3 in Molecular Beam Epitaxy
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    Electrochemical Soc. Proc. Vol. 97-21, p259, 1997.
  193. Self Assembling Quantum Dot Laser
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  195. MBE growth and optical properties of Si(1-y)C(y) and Si(1-x-y)Ge(x)C(y) alloy layers
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  197. Self-Assembling InP Quantum Dots for Red Lasers
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  199. Spin polarization of two-dimensional electrons in different fractional states and around…
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  200. Anisotropic surface acoustic wave scattering in quantum-wire arrays
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    Phys. Rev. B: Condens. Matter (1997), 55(15), 10120
  201. Comparison of the thermal stability of Si0.603Ge0.397/Si and Si0.597Ge0.391C0.012/Si…
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  202. Band alignment in Si1-yCy/Si(001) and Si1-x/Gex/Si1-yCy/Si(001) quantum wells by…
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  203. Observation of screening in the magneto-Coulomb drag between coupled two-dimensional..
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  204. Self-organized growth of quantum dot-tunnel barrier systems.
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  205. Confinement potential and surface state density in deep-mesa etched quantum wires.
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  206. Excitonic effects in the recombination radiation spectra of completely filled Landau levels of two-dimensional electrons. Volkov, O.V.; Zhitomirskii, V.E.; Kukushkin, I.V.;…
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  208. Magneto-optical evidence of the percolation nature of the metal-insulator transition in the…
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  212. Optics of multiple quantum wells uniaxially stressed along the growth axis.
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  213. Coupling of lateral and vertical electron motion in GaAs-AlxGa1-xAs quantum wires and dots.
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  214. Temperature and density dependence of the electron Lande g factor in semiconductors.
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  215. Single-electron tunneling through a double quantum dot: the artificial molecule.
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  216. Strong alignment of self-assembling InP quantum dots.
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  217. Dependence of the lattice parameters and the energy gap of zinc-blende-type…
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  219. Acoustic edge modes of the degenerate two-dimensional electron gas studied by time…
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  220. Photoconductive switches for time-resolved transport measurements at low temperatures…
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  221. Direct imaging of the lateral confinement potential in a self assembled single electron… Christen, J.; Bertram, F.; Dilger, M.; Haug, R. J.; Eberl K.; Klitzing, K. v.; Bimberg, D.
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  222. Transport characterization of in-plane gate devices fabricated by direct epitaxial growth...
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  223. Time-resolved electroluminescence spectroscopy of resonant tunneling in GaAs-AlAs…
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    Applied Physics Letters (20 May 1996) vol.68, no.21, p.2921-3.
  224. Gallium self-diffusion in gallium arsenide: a study using isotope heterostructures
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    Int. Conf. Phys. Semicond., 23rd (1996), Volume 4, 2793-2796.
  225. Detection of compressible and incompressible states in quantum dots and antidots by… Bollweg, K.; Kurth, T.; Heitmann, D.; Gudmundsson, V.; Vasiliadou, E.; Grambow, P.;…
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  226. Ga self-diffusion in GaAs isotope heterostructures.
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  227. Interaction effects between coupled two-dimensional electron-hole systems
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    Int. Conf. Phys. Semicond., 23rd (1996), Volume 3, 2335-2338.
  228. Interacting 2D electron gases in double quantum wells at low electron densities
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    Int. Conf. Phys. Semicond., 23rd (1996), Volume 3, 2303-2306.
  229. Multimode pulse transmission through a 2DEG
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    Int. Conf. Phys. Semicond., 23rd (1996), Volume 3, 2287-2290.
  230. Band-edge photoluminescence from pseudomorphic Si1-yCy and Si1-yCy/Si1-xGex Brunner, K.; Winter, W.; Eberl, K.
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  231. Hot luminescence polarization in GaAs/AlAs superlattices
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  232. Electronic transport through an artificial molecule
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    Int. Conf. Phys. Semicond., 23rd (1996), Volume 2, 1573-1576.
  233. Ballistic motion of electrons in a random magnetic field
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  234. Single-electron transistors with a self-assembled quantum dot.
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  235. Optical gain in self-assembled InP/GaInP quantum dots
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  236. Surface acoustic wave scattering in quantum wire and quantum dot arrays
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  237. Spin-flip Raman scattering in InP/InGaP quantum dots
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  238. Spatially indirect radiative recombination of carriers localized in Si1-x-yGexCy/Si1-yCy…
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  239. Si1-yCy-alloy layers. A novel semiconductor material
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  240. Inelastic light scattering by magnetoplasmons and Bernstein modes in GaAs-AlGaAs…
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  241. Quantitative model of phonon-drag imaging experiments.
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  242. Raman spectroscopy of magnetoplasma excitations in a system of two-dimensional…
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  243. Magnetooptic measurements of the cyclotron mass and g-factor of light holes in GaAs
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  244. Ordering of nanoscale InP islands on strain-modulated InGaP buffer layers.
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  245. Combined 1D-2D intersubband excitations and 1D single-particle spectrum in narrow…
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  246. In-plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic…
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  247. Manifestation of excitonic effects in the magneto-oscillations of the intensity of the…
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  248. Coupled modes and filling factor dependent edge potentials in double-layered antidot…
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  249. HREELS analysis of band bending on sulfur-covered GaAs(100) surfaces.
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  250. Surface acoustic wave studies of quantum nanostructures.
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  251. Photoreflectance spectroscopy of GaAs/AlxGa1-xAs SQW structures under pressure
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  252. High pressure study of electron-electron interactions in double-layer 2d electron gases
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  253. Photon-assisted tunneling through a double quantum dot.
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  254. Structural and optical characterization of InP/GaInP islands grown by solid-source MBE.
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  255. Transport spectroscopy in single-electron tunneling transistors.
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    Nanotechnology (Dec. 1996) vol.7, no.4, p.381-4.
  256. Magnetotransport in periodic magnetic fields.
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  257. Magnetotransport phenomena in single AlGaAs/GaAs quantum wires grown on laterally…
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  258. Photoluminescence of a pseudomorphic Si1-yCy/Si MQW structure under pressure.
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  259. Near-band-edge photoluminescence from pseudomorphic Si1-yCy/Si quantum well…
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  260. Polarization of hot photoluminescence in GaAs/AlAs superlattices.
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  261. Optical gain and lasing in self-assembled InP/GaInP quantum dots.
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    Applied Physics Letters (8 July 1996) vol.69, no.2, p.212-14.
  262. Anisotropic magnetoresistance of a classical antidot array.
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    Physical Review Letters (1 July 1996) vol.77, no.1, p.147-50.
  263. Universal magnetoluminescence kinetics in magnetically frozen 2D electron systems.
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  264. Self-assembled InP/GaInP quantum dot lasers
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  265. Pulse propagation in spin-polarized edge channels and at fractional filling factors.
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  266. Influence of scattering processes on the electronic properties of composite fermions.
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  267. Photoluminescence study of Si1-yCy/Si quantum well structures grown by molecular beam..
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  268. Growth and characterization of pseudomorphic Ge1-yCy and Si1-yCy alloy layers on Si…
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  269. Single-electron transistors with quantum dots.
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  270. RHEED intensity observation of AlAs and GaAs by in situ etching using arsenic tribromide
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  271. Dependence of the energy gap of GaAs on the isotopic mass of Ga
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  272. Growth and characterization of Ge1-yCy/Si superlattice structures on Si substrates.
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  273. Phonon spectroscopy with tunnel junctions in high magnetic fields.
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    Physica B (April 1996) vol.219-220, p.16-18.
  274. Exciton relaxation dynamics in quantum dots with strong confinement.
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  275. Internal electron-electron interactions in one-dimensional systems detected by Raman…
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  276. Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned…
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  277. Magneto-optical evidence of the percolation nature of the metal-insulator transition in the…
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  278. Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by…
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  279. Electronic subband structure of InP/InxGa1-xP quantum islands from high-pressure…
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  280. Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum…
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  281. Linear and nonlinear waves in edge channels.
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  282. Photon-assisted tunneling through a quantum dot at high microwave frequencies
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    22nd International Conference on the Physics of Semiconductors
  284. Triangular lattice of crystallized electrons observed in time resolved luminescence.
    Kukushkin, I.V.; Falko, V.I.; Haug, R.J.; von Klitzing, K.; Eberl, K. ; Totemeyer, K.
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  285. Radiative lifetime of resonantly excited excitons in quantum dots.
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  286. Time-resolved measurement of transport in edge channels.
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  287. Preparation and optical characterization of nanoscale InP islands embedded in…
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  288. Spectroscopic elipsometrie and band structure of Si 1-y C y alloys grown…
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  289. Preparation and time resolved photoluminescence of nanoscale inp islands in ingap
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  291. A study of the hierarchy of the fqhe by time-resolved luminescence or composite fermion…
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  292. Influence of metastable states of 2-dimensional electrons on the electronic-properties of…
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  293. Tunneling between edge channels and the bulk of a 2-dimensional electron-gas
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  294. Raman-scattering due to interface optical phonons in GaAs/AlAs multiple-quantum wells
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  296. Circular-polarization of far-infrared modes in antidot arrays
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  298. Heavy phosphorus doping in molecular-beam epitaxial grown silicon with a gap…
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  299. Electrons in a periodic magnetic-field-induced by a regular array of micromagnets
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    Physical review letters, (10 apr 1995) vol. 74, no. 15, pp. 3013-3016.
  300. Quasi-one-dimensional single AlGaAs/GaAs hall bar quantum wires grown on patterned…
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    Applied physics letters, (01 may 1995) vol. 66, no. 18, pp. 2385-2387.
  301. Fabrication and characterization of micromagnet arrays on top of GaAs/AlGaAs
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    Applied physics letters, (04 sep 1995) vol. 67, no. 10, pp. 1441-1443.
  302. Growth of high-quality ingap and application for modulation-doped structure by …
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    Applied physics letters, (21 aug 1995) vol. 67, no. 8, pp. 1168-1169.
  304. Strain-induced magnetoresistance oscillations in gaas-algaas hetero-junctions with…
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    Semiconductor science and technology, (may 1995) vol. 10, no. 5, pp. 715-719.
  305. Tunneling across incompressible strip at the edge
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    Physica b, (may 1995) vol. 211, no. 1-4, pp. 420-422.
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  308. Piezo-optical response of Si 1-y C y alloys grown pseudomorphically on Si (001)
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  311. Electrooptic imaging of potential distributions in the quantum hall regime
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    Institute of physics conference series, (1995) no. 141, pp. 87-92.
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  314. Influence of the depletion length on the commensurability effects in tunable antidots
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  318. Collapse of the hartree term of the coulomb interaction in a very dilute 2D electron-gas
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  319. Si/Ge and Si/SiGe heterostructures and superlattices
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