Silicon Sublimation Doping Source SUSI-D2

Dual Si filament
Direct current heating for fast thermal response and control
Tantalum shielding minimizes contamination and ensures thermal stability
Compact, robust design with standard CF flange integration
Fast heating and low power operation possible
Fast on/off-switching of Si filament possible
Compatible with most MBE systems

Introduction

The Silicon Sublimation Doping Source SUSI-D2 is equipped with a pair of compact silicon filaments (Si stripes). The silicon filament stripes are heted by electrical current. Silicon sublimation from a solid filament provides a very clean and constant Si flux. The combination of a dual filament setup and advanced tantalum shielding ensures both thermal stability and operational flexibility.

The low thermal heat capacity of the filament allows fast and precise ramping of the source which is in particular suitable for silicon doping applications in III-V-MBE.

Application

The SUSI-D2 is used for Si doping in III-V MBE and doping in Si MBE. For doping in III-V MBE the typically required silicon flux is considerably lower than 0.1 Å/min. The electrical current needed for providing this flux rate is between 13 to 18 A for SUSI-D2 These values may be used as a reference point to start calibration of the doping level as a function of the current.The low power operation guarantees a long lifetime without any servicing.

Technical Characteristics

Filament	doped monocrystalline silicon stripe filement
Heat shielding	shielded with tantalum parts
Thermocouple, Temperature sensor (other types on request)	none
Operating temperature	max. filament temperature 1400°C (limited by Si melting point)
Bakeout temperature	250°C
Cooling / water cooling	separate cooling shroud