Glossary
Glossary
2D supracrystals
The supracrystals are defined as the supra atomic periodic structure where atoms in the...

2DEG
two dimensional electron gas, typically realised in GaAs / AlGaAs heterostructures or...

AFM
atomic force microscopy

ALD
Atomic layer deposition

AlN
Aluminium nitride compound

Annealing Oven
Oven for, e.g.,  Rapid Thermal Annealing (RTA) or Rapid Thermal Processing (RTA)...

Antimonides
Componund semiconducurs which substantially contain phosphorus

Arsenides
Componund semiconducurs which substantially contain arsenic

Bake-out
UHV chambers are baked out at about 200C for several days to remove weakly bound...

Bayard Alpert ion gauge
The BA ion gauge is a hot-cathode ion gauge, with a small ion collector inside a grid...

Beam Flux Monitor
A BA ion gauge which can be brought close to the substrate position in an MBE system....

BEP
The Beam Equivalent Pressure BEP is a local pressure of a directional gas beam on a...

Borophene
Borophene is a proposed crystalline allotrope of boron. One unit consists of 36 atoms...

Carbon nanotubes
Carbon nanotubes cylindrical nanostructure. Nanotubes have been constructed with...

CBE
Chemical beam epitaxy. MBE with gas sources instead of solid sources like effusion cells.

CF flange
CF (ConFlat) flanges use a copper gasket and a knife-edge flange to achieve an...

CIGS
Copper indium gallium di-selenide (CIGS) is a semiconductor material composed of...

CIS
The material is a solid solution of copper indium selenide (CIS), see also CIGS.

Cold Lip Filament CL
A cold lip filament CL is a shorter version of the standard filament SF. It does not...

Compound semiconductor
Semiconductor material composed of elements from two or more different groups of the...

Contact alloying
Our Rapid Annealing Systems AO 500 / AO 600 are practical for fabrication of ohmic...

Critical Thickness
Important figure in strained layer epitaxy. A strained SiGe alloy grown on Si grows...

Cryopump
A cryopump (cryogenic pump) is a vacuum pump that traps gases and vapours by condensing...

Crystallites
Crystallites are small, micrometer or nanometer size crystals, often held together...

CZTS
Copper zinc tin sulfide (CZTS) is a quaternary semiconducting compound with kesterite...

DBR
Distributed Bragg Reflector

Degassing
see "Outgassing"

Diaphragm pump
A diaphragm pump (or Membrane pump) is a positive displacement pump that uses a...

Dilute nitrides
GaAsN, InGaAsN componds with only a small percentage of nitrogen incorporated on...

Doping
Intentionally introduction of impurities into a high pure (intrinsic) semiconductor for...

Droplet epitaxy
Mechanism for the growth of one-dimensional structures, such as nanowires, from vapor...

Dual Filament DF
A dual filament is composed of two heaters that can be independently operated by two...

E-beam evaporator
Evaporator in which a source material target (anode) is bombarded with an electron...

Effusion cell
see also "Knudsen cell"In contrast to a Knudsen cell which has uniform vapor...

Epitaxial layer
Crystalline film deposited by MBE or CVD on a crystalline substrate wafer.

Facet passivation
High power GaAs/AlGaAs/InGaAs laser diodes need a passivation layer on the cleaved...

FET
Field Effect Transistor

Filament Types
Depending on specific applications and differing requirements of the evaporants...

Fullerenes
A fullerene is any molecule composed entirely of carbon, in the form of a hollow...

Germanane
Germanane is a single-layer crystal composed of germanium with one hydrogen bonded in...

Graphane
Graphane is a polymer of carbon and hydrogen with the formula unit (CH)n where n is...

Graphene
Graphene is a substance made of carbon, with atoms arranged in a regular hexagonal...

Graphyne
Graphyne is another 2-dimensional carbon allotrope whose structure is similar to...

Growth model
Theoretical models of crystal surfaces provide insights into the crystal growth...

GSMBE
Gas Source Molecular Beam Epitaxy

HBT
Hetero-Bipolar Transistor

HEMT
High Electron Mobility Transistor

Heterojunction
A heterojunction or heterostructure is the interface that occurs between two layers or...

Heterostructure
see heterojunction

Heusler alloy (or Heusler compound)
Heusler alloy (or Heusler compound) is a ferromagnetic metal alloy with special...

High mobility electrons
High mobility in the context of MBE means frequently high mobility electrons or holes...

Hot Lip Filament HL
A hot lip filament HL is wired more densely at the upper part than the standard heating...

II-IV semiconductor
semiconductor material which contains elements out of group II and VI, as for example ZnSe

III-V semiconductor
semiconductor material which contains elements out of group III and V, as for example...

Interface
Interface that occurs between two layers or regions of dissimilar crystalline...

Intersubband transition
E.g.: Transition from an electron in a higher subband state to a lower subband state by...

Ion getter pump
An ion getter pump is a ultra-high vacuum pump capable of reaching pressures as low as...

Kesterides
Kesterites are sulfide crystals with a formula Cu2(Zn,Fe)SnS4. In its lattice...

KF flange
Klein Flange (KF) flanges are made with a chamferred back surface that attached with a...

Knudsen Cell
Knudsen effusion Cells are used as evaporator in MBE for materials like Ga, In, Al, As...

Laser diodes
A laser diode is a laser whose active medium is formed by a p-n junction of a...

LEED
Low Energy Electron Diffraction

Magnetic semiconductors
Magnetic semiconductors are materials that exhibit both ferromagnetism and...

MBE
MBE (molecular beam epitaxy) is a method of depositing layers of materials with atomic...

Micro-cavity
An optical microcavity is a structure formed by reflecting faces on the two sides of a...

Migration enhanced MBE
MBE process but, with alternate deposition of the constituent elements (i.e. with...

Misfit Dislocation
Misfit dislocations are basically where there is a missing or dangling bond in the...

MOCVD
Metal organic chemical vapor deposition

Modulation doping
semiconductor heterostructure where doping layer is separated from the charged carriers

Molybdenum disulfide
Molybdenum disulfide is the inorganic compound (MoS2). Molybdenum disulfide is similar...

MOMBE
Metal Organic Molecular Beam Epitaxy

MOVPE
Metal Organic Vapor Phase Epitaxy

Nanostructure
A nanostructure is an crystal or material with a size in the nanometer scale.

Nanowire
A nanowire can be defined as structure that has a thickness or diameter constrained to...

Nitrides
GaInAlN compound semiconductors and heterostructures used for LEDs, laser diodes or...

Nucleation
Adsorption of atoms in MBE on a substrate surface, and subsequent growth of a...

OLED
Organic Light Emitting Diode

Outgassing
(sometimes also called degassing) Initial thermal outgassing of UHV components like...

PBN
Pyrolytic Boron Nitride. In the form of pyrolytic BN it is used for crucibles in MBE.

Penning gauge
cold-cathode ionization gauge. A DC potential of about 4 kV is used for operation....

Phosphorene
Phosphorene is a 2-dimensional, crystalline allotrope of phosphorus. Its mono-atomic...

Phosphoros compounds
Compound semiconductors which substantially contain phosphoros, like InP, GaP or GaInP.

Photodiodes
A photodiode is capable of converting light into either current or voltage.

Pirani gauge
A Pirani gauge consist of a metal wire in the pressure being measured. The wire is...

Point Source
A point source is an evaporation source or effusion cell which has a single localized...

Product Code
Our product code gives information about the product configuration itself.Example for...

Pseudo-morphic growth
Planar epitaxial layer growth in straind layer epitaxie. In the pseudo-morphic growth...

PVD
Physical Vapor Deposition

QMA Quadrupole Mass Analyzer
Inside a Quadrupole Mass Analyzer four parallel rods with applied oscillating...

Quantum cascade laser
Unlike normal interband semiconductor lasers, QCLs are unipolar and laser emission is...

Quantum computer
A quantum computer makes use of quantum mechanical phenomena, such as superposition and...

Quantum dot
Quantum dots are nanometer scale semiconductors structures whose carriers are confined...

Quantum well
A quantum well is a potential well in one crytalographic direction with only discrete...

Quartz crystal microbalance
A quartz crystal microbalance (QCM) measures a mass per unit area by measuring the...

RDS
Reflectance Difference Spectroscopy. It is a spectroscopic technique which measures the...

RHEED
Reflection high energy electron diffraction. RHEED is used in MBE systems to check...

RHEED oscillations
Intensity oscillations observed during layer by layer growth in MBE. RHEED oscillations...

Roughing pump
Vacuum pump used to initially evacuate a vacuum system, as a first stage towards...

RTA Rapid Thermal Annealing
Rapid Thermal Annealing (RTA) is a process in which a wafer is heated  in...

RTP Rapid Thermal Processing
For Rapid Thermal Processing (RTP) wafers are rapidly heated to high...

sccm
sccm  is an abbreviation of standard cubic centimeters per minute...

Scroll pump
A scroll compressor uses two interleaving scrolls (spirals) to pump, compress liquids...

Selective area epitaxy
Selective area epitaxy is the local growth of epitaxial layer through a patterned...

Self-assembling quantum dots
Quantum dots or nanometer small semiconductor island created in strained layer epitaxie...

Silicene
Silicene is a two-dimensional allotrope of silicon, with a hexagonal honeycomb...

Solar cell
A solar cell is an electronic device that converts the energy of light directly into...

Spintronics
Spintronics (spin transport electronics), also known as magnetoelectronics, is an...

Sputtering
Sputtering is a process where atoms are ejected from a solid target (source material)...

Standard Filament SF
A standard wire filament SF heats the crucible evenly along its entire length. A...

Stanene
Stanene is a 2 dimensional material. It is composed of tin (Sn) atoms arranged in a...

STM
Scanning Tunneling Microscopy

Strain layer epitaxy
Epitaxial deposition of strained heterostructures. For example SiGe deposited on Si...

Strain relaxation
See strain layer epitaxy

Stranski–Krastanov growth
It is a layer-plus-island crystal growth mode. Initially a planar films of one or more...

SUMO source
Thermal effusion source from Veeco Inc. for Group III evaporation in MBE with a...

Superlattice
Periodic structure of alternating layers of two or more semiconductor materials....

Surface reconstruction
Surface reconstruction refers to the process by which atoms at the surface of a crystal...

TEM
Transmission Electron Microscopy

Tip Filament TF
A tip filament TF practically is the upper filament of a dual filament. Only the...

Topological Insulator
Material that behaves as an insulator in its interior but whose surface contains...

TSP
Titanium Sublimation Pump

Tungsten diselenide
Tungsten diselenide is an inorganic compound (WSe2). It has a hexagonal crystalline...

Turbo-molecular pump
These pumps work on the principle that gas molecules can be given momentum in a desired...

UHV
A vacuum regime of a pressure lower than 10-9 mbar characterizes Ultra High Vacuum (UHV)

Valved cracker source
An evaporation source which comprising a reservoire, a valve for flux control and a...

VCSEL
Vertical Cavity Surface Emitting Laser diode

VPE
Vapor Phase Epitaxy

XRD
X-Ray Diffraction