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epitaxy in OCTOPLUS 500 EBV - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch or 6 inch Si substrates.
epitaxy in OCTOPLUS-O 400 - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS-O 400 MBE system features a unique dual zone design with differential pumping that allows depositing oxide layers under high partial pressure.
epitaxy in OCTOPLUS 300 - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS 300 system is ideally suited for material deposition onto small samples. It ensures a good accessability and easy operation and maintenance.
epitaxy in Effusion Cells - Dr. Eberl MBE-Komponenten GmbH Effusion cells for different temperature scales, capacities, partly with thermal cracking or oxygen resistance as well as sublimation and decomposition sources.
epitaxy in Home - Dr. Eberl MBE-Komponenten GmbH Dr. Eberl MBE-Komponenten GmbH develops, manufactures and sells thin film deposition equipment for MBE, surface science and other UHV-applications.
epitaxy in Publications - Dr. Eberl MBE-Komponenten GmbH The following references are sorted by product and present a selection of publications based on the use of our MBE components and systems.
epitaxy in Wafer Heater WH - Dr. Eberl MBE-Komponenten GmbH The wafer heaters or heated stations - WH - are suited for all substrate heating applications where the full functionality of a substrate manipulator is not required.
epitaxy in Thin Film Systems - Dr. Eberl MBE-Komponenten GmbH Our versatile thin film deposition system is based on the OCTOPLUS 500 chamber and ideally suited for PVD applications, including CIGS, CdTe and kesterites.
epitaxy in OCTOPLUS 400 - Dr. Eberl MBE-Komponenten GmbH OCTOPLUS 400 systems are ideally suited for III-V, II-VI and other compound semiconductor applications. The OCTOPLUS 400 can be adapted to small wafer segments.
epitaxy in OCTOPLUS 500 - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS 500 system was developed for the growth of high quality III-V and II/VI heterostructures on 4 inch or 6 inch Si substrates.