The EBV 300‑1000 Electron Beam Evaporator is optimized for high‑purity SiGe and silicon‑based film growth under ultra‑high‑vacuum conditions. With 10 kW beam power and a 1000 cm³ hearth, it supports long, stable evaporation runs of silicon, germanium or other low‑vapour‑pressure materials while maintaining precise flux control and material purity.
Engineered for Si‑MBE environments, the EBV 300‑1000 features options such as single‑crystal silicon shielding, high‑purity crucible liners, and a 270° beam deflection. These design elements ensure clean deposition, extended filament life, and reliable, reproducible performance for advanced SiGe heterostructure growth.
Its modular design makes the EBV 300‑1000 ideally suited for integration into our Octoplus 1000 MBE system, supporting extended length growth campaigns on 300 mm wafer with uniform flux distribution across large substrates. Robust water cooling and tailored mounting options ensure optimal thermal management and mechanical compatibility, making it the preferred choice for high‑volume silicon and SiGe epitaxy in next‑generation research and production environments.
