New MBE-System OCTOPLUS 1000
We are proud to present our first SiGe-MBE-System for 300 mm silicon wafers
The OCTOPLUS 1000 represents a new generation of molecular beam epitaxy systems designed for high-efficiency, high-reliability growth on 300 mm silicon wafers. Engineered for both advanced research and production environments, it delivers:
Up to 50% higher material output thanks to an optimized, material-efficient deposition geometry
Flexible source configuration - e-beam evaporators (up to 1000 cm³), effusion cells, valved crackers, metalorganic sources, gas sources & more
Precise temperature control and high temperature substrate heater for Si/SiGe, oxides (STO/BTO/LMO) and complex heterostructures
Robust UHV performance with LN2 cooling shroud and high-performance pumping
Customizable in-situ monitoring (RHEED, BFM, QCM, ellipsometry, band-edge thermometry, etc.)
Expert support from PhD-level MBE specialists
With its large-capacity source ports, scalable architecture, the OCTOPLUS 1000 empowers teams to push the frontier of epitaxial materials - from Si/SiGe to ferroelectric and ultra-wide-bandgap oxides.