MBE Components, Dopant Cells

Doping Cells

Doping Effusion Cells EZDoping Effusion
Cell
DEZ
Silicon Doping Source SUSI-DSilicon Doping
Source
SUSI-D
Dual Doping Sources DDSDual Doping
Source
DDS
Carbon Doping Source SUKO-DCarbon Doping
Source
SUKO-D
Phosphorus Doping Sources DECOPhosphorus Doping Source
DECO-D
Electron Beam Boron Doping Source EBVV-BElectron Beam Boron Doping Source
EBVV-B

Select doping cell by dopant material:

Bulkmaterial Dopant Type Source Comment
GaAs / AlGaAs Si n DEZ
Si n SUSI-D high mobility doping, fast switching
Te n DEZ GaTe source material, T=700°C -> 1019cm3
Be p DEZ
C p SUKO-D high mobility p-type doping
Si / SiGe Sb n DEZ segregation effect
As n DEZ high segregation effect in MBE
P n DECO-D GaP source material, T=700°C -> 1019cm3
B p HTS
B p EBVV-B extremely high Boron doping levels
Ga p DEZ
Al p DEZ segregates in MBE
Er opt. DEZ used for light emission
GaN / GaInN Si n DEZ
Si n SUSI long filament lifetime / Si flux option
Mg p DEZ
Zn p DEZ high activation energy
GaP / GaAsP S n OME, valved source please contact us
Te n DEZ use GaTe as source material
Zn p DEZ
SiC N n plasma source please contact us
Al p DEZ
ZnO B n HTS
N p plasma source please contact us
ZnSe I n valved source valved source / please contact us
ZnCl2 n gas injector valved source / please contact us
N p plasma source please contact us
CdTe Al n DEZ
Cu p DEZ
Sb p DEZ
Other Fe HTEZ
Cr HTEZ
Cu DEZ