Up to 1021/ccm Boron doping in Si-MBE
Evaporation of elemental Boron or Si-B alloy in vertical e-beam evaporator
Small dimensions; can be used in DN63CF
(O.D. 4.5“) effusion cell ports; hearth volume 5 cm³
Long filament lifetime and easy maintenance
270° beam deflection
High frequency x-y-beam deflection system
Silicon shielding parts for use in SiGe-MBE
The Vertical Electron Beam Evaporator EBVV-B 63-5 allows to introduce real e-beam evaporation into your MBE system that has originally been designed for effusion cells only.
The unique and extremely compact design permits to install the EBVV-B 63 instead of an ordinary effusion cell on any MBE system having CF63 ports with an I.D. ≥ 60 mm. Even tilted ports can be used. Despite its small footprint, the new EBVV-B 63 includes a complete electromagnetic x- and y-dynamic beam deflection system and can deliver beam powers up to 3 kW.
The evaporator hearth volume is 5 cm³.
The 270° beam deflection design of the electron emitter eliminates nearly all ion bombardment on the filament due to a sharply bent electron beam path near the beam exit aperture. Thus, the filament is well shielded from evaporant or charged particles ejected from the crucible.
EBVV-B 63-4, view onto emitter block and filament
The EBVV-B 63-5 allows high purity evaporation of elemental boron or Si-B alloy. Consequently, it allows Si and SiGe MBE growth of highest Boron doped epi-layers with Boron concentrations up to 1021/ccm.
EBVV-B 63-5, pool of molten silicon (EBVV is mounted into a port 35° to the vertical axis)
Silicon shielding parts
The EBVV-B is equipped with a specially adapted set of shielding parts manufactured from high-purity single crystalline Si. A Si plate and a ring cover all parts of the metallic body that are potentially subject to electron or ion bombardment and that face the substrate.
EBVV-B 63-5, with shielding parts
|Set of silicon shielding parts for EBVV-B 63-5|
||DN63 CF (O.D.4,5“) or DN100 CF (O.D.6“)|
|Dimensions in UHV
||Length: 234 – 450 mm (user specific); ØD: 60 mm|
|Crucible capacity||5 cm³|
|Hearth dimensions||Ø 23 mm (12° taper) x 15 mm|
|Filament type||short-legged coil of W wire, electron emitting filament|
|Bakeout temperature||200° (all air side connectors removed)|
|Operating pressure||1 × 10-11 mbar ….1 × 10-5 mbar|
|Accelaration voltage||4 - 6 kV|
|Beam power||max. 3 kW|
|Filament current||max. 25 A at 10V (AC)|
||5 mm diameter, approx.|
|Primary beam deflection||C270° by permanent magnet system|
|Dynamic beam deflection||coils wound from KAPTONTM isolated wire; defl. frequency: max. 150 Hz; x-deflection current: ± 1,5 A max.; y-deflection current: ± 2 A max.|
|Water cooling||Min. water flow rate 5 l/min at 4 bar|
|Options||Tilted hearth (T); integrated rotary shutter (S)|
|Schematic drawing of the Electron Beam Boron Doping Source EBVV-B
(drawing shows EBVV-B 63-5)