Oxygen Resistant Substrate Manipulator / Heated Station
SH-O 150-2PT25-S, substrate manipulator on DN150 CF (O.D. 8") mounting flange; for a 2 inch wafer, with noble-metal-alloy heater and 25 mm linear travel for substrate transfer; with integrated main shutter
Oxygen resistance option of the SH substrate manipulator
Substrate temperatures up to 700°C with Ni-alloy heater; up to 900°C with noble-metal-alloy heater up to 900°C with SiC heater depending on oxygen partial pressure
Pressure range from UHV up few mbar oxygen
Water cooled ceramic bearings for continuous rotation
Substrate sizes up to 6 inch
MBE-Komponenten GmbH offers ovens, deposition stations or heated stations which are resistant to oxygen or other reactive gas atmosphere. The oxygen resistant option is indicated by the affix "-O". Selected shielding and construction materials are used for high temperature applications in oxygen rich environments. Maximum substrate temperatures of 700°C are possible using Ni-alloy heaters. Noble-metal-alloy heaters and SiC heaters work for even higher substrate temperatures of up to 900°C or in some cases even 1000°C depending on the oxygen partial pressures during operation.
Due to the wide range of different applications and processes in oxygen rich environments a general recommendation of heater and construction materials is difficult. Please contact our specialists for more detailed recommendations to your specific application.
The specifications and options for the SH-O substrate manipulators are almost the same as for our SH models. They are:
sample size up to 6"
continuous substrate rotation
water cooled ceramic bearings
linear travel for substrate transfer
thermocouple: Type K Chromel/Alumel (types R or S on request)
integrated main shutter
4" Substrate heater with free-standing noble-metal-alloy wire
4" Substrate manipulator with SiC heater
SH-O substrate manipulators are used in oxygen rich environments (up to several mbar) or reactive gas atmosphere.
Attention: Special care must be taken when compounds are operated at high temperature and high pressure. In case of pressures above 10-4 mbar the thermal conductivity of gases has significant effects to heat transfer from heater to sample. It is strongly recommended to contact our specialists when planning your application.
Ni-alloy wire (Ni) or noble-metal-alloy wire (Pt), or SiC heater (S)
Chromel/Alumel (type K); (others on request)
max. 700°C with Ni-alloy heater, max. 900°C with noble-metal-alloy and SiC heater
copper-free contacts for metal heater
25 mm standard, 30-50 mm on request
integrated main shutter (S), electrically insulated wafer holder with additional feedthrough for bias voltage (B), tantalum wafer holder (T)
Schematic drawing of the Substrate Manipulator SH-O