Oxygen resistance option of the SH substrate manipulator
Substrate temperatures up to 700°C with Ni-alloy heater; up to 900°C with noble-metal-alloy heater
up to 900°C with SiC heater depending on oxygen partial pressure
Pressure range from UHV up few mbar oxygen
Water cooled ceramic bearings for continuous rotation
Substrate sizes up to 6 inch
MBE-Komponenten GmbH offers ovens, deposition stations or heated stations which are resistant to oxygen or other reactive gas atmosphere. The oxygen resistant option is indicated by the affix "-O".
Selected shielding and construction materials are used for high temperature applications in oxygen rich environments. Maximum substrate temperatures of 700°C are possible using Ni-alloy heaters. Noble-metal-alloy heaters and SiC heaters work for even higher substrate temperatures of up to 900°C or in some cases even 1000°C depending on the oxygen partial pressures during operation.
Due to the wide range of different applications and processes in oxygen rich environments a general recommendation of heater and construction materials is difficult. Please contact our specialists for more detailed recommendations to your specific application.
The specifications and options for the SH-O substrate manipulators are almost the same as for our SH models. They are:
4" Substrate heater with free-standing noble-metal-alloy wire
4" Substrate manipulator with SiC heater
SH-O substrate manipulators are used in oxygen rich environments (up to several mbar) or reactive gas atmosphere.
Attention:
Special care must be taken when compounds are operated at high temperature and high pressure. In case of pressures above 10-4 mbar the thermal conductivity of gases has significant effects to heat transfer from heater to sample. It is strongly recommended to contact our specialists when planning your application.
Technical data |
|
Heater type | Ni-alloy wire (Ni) or noble-metal-alloy wire (Pt), or SiC heater (S) |
Thermocouple | Chromel/Alumel (type K); (others on request) |
Wafer temperature | max. 700°C with Ni-alloy heater, max. 900°C with noble-metal-alloy and SiC heater |
Bakeout temperature | 250°C |
Electrical contacts | copper-free contacts for metal heater |
Linear travel | 25 mm standard, 30-50 mm on request |
Options | integrated main shutter (S), electrically insulated wafer holder with additional feedthrough for bias voltage (B), tantalum wafer holder (T) |
Schematic drawing of the Substrate Manipulator SH-O
drawing shows
SH-O 150-2W25-S)
For general information on CF mounting flanges see Flange and Gasket dimensions.