The Valved Alkali Metal Source AKS is designed for evaporation of elemental high vapor pressure alkali metals like Cs and Rb in standard MBE or UHV systems.
The Valved Arsenic Cracker Source is designed for high performance growth of III-V materials and combines large crucible capacity with precise and fast flux control.
The Valved Corrosive Material Cracker Source VCCS is designed for controlled injection of radicals of antimony, tellurium, magnesium or other corrosive materials in standard MBE applications.
The Valved GaP Compound Source VGCS is a high purity P2-source, based on the decomposition of high purity GaP.
The Valved Mercury (Hg) Evaporation Source HGS is designed for evaporation of elemental mercury in standard UHV or MBE systems.
The VSCS is a valved Selenium cracker source, employed in high efficiency CIGS solar cell growth and other II-VI semiconductor material deposition processes.
The VCS is a valved sulfur cracker, employed in high efficiency CIS solar cell growth and other II-VI semiconductor material deposition applications.
The Valved Sulfur Source VSS aims at R&D applications where valve controlled small or medium flux rates of high vapor pressure materials are required.
