OCTOPLUS 500, MBE Systems


III/V, II/VI and other materials MBE System


System Octoplus 500
MBE system OCTOPLUS 500
  • State-of-the-art MBE system for research and production processes

  • Applications: III/V, II/VI and other heterostructures

  • 12 source ports

  • Wide range of source options, e.g. effusion cells, gas sources, manipulators

  • Substrate sizes 2", 3" or 4"; face-down wafer geometry 

  • Strong UHV pumping system

  • LN2 cooling shroud

  • In-situ characterization capability

  • Strong support by PhD MBE experts

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The OCTOPLUS 500 system was developed for the growth of high quality III-V heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with up to 12 effusion cells or gas injectors for deposition or surface treatment.

The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.

Outstanding features of the OCTOPLUS 500 are the high reliability and versatility of the system.

The standard version of the OCTOPLUS 500 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.

Options for OCTOPLUS 500:

  • Additional load-lock or buffer chambers

  • Wafer transfer system

  • Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators

  • Software/hardware control system

  • Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)

  • In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer

  • Additional requirements


Technical data

Size of deposition chamber
550 mm I.D.
Base pressure
< 5x10-11 mbar
Pumping TSP, ion getter pump, cryopump and/or turbopump
Cooling Shroud LN2 or other cooling liquid on request
Substrate heater temperature up to 800°C, 1000°C or 1400°C
Substate size up to 4"
Bakeout temperature up to 200°C
Source ports 12 ports DN63CF and DN100CF
Source types
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources
soft-acting linear or rotary shutters
In-situ monitoring ion gauge, QCM, pyrometer, RHEED, QMA
Sample transfer linear transfer rod, manual or semi-automatic in face-down geometry
Load lock magazine with 6 or more substrates turbo-pumped
MBE control software Tusker
Service system installation and acceptance testing
MBE training by MBE experts

Examples for applications and corresponding sources

Effusion Cells
Sublimation Sources
Valved Sources
Plasma Sources

III/V Ga, In, Al C, Si doping As, P, Sb
II/VI Zn, Cd, Be S, Se, Te N-doping
IV Ge, Sn, Pb B, P, Sb doping Si, Ge
GaN Ga, In, Al N
Metals Cu, Al, Ni, Co, ... Pt, Ta, Pd, Mo, W
Topological Insulators Ge, Sn, Te, Bi, GeSb Se, Te B
Graphene / Silicene C, Si
Oxides Fe, Ni, Mn, Bi, Eu,
Ga, ...
Thin Film Solar Cells Cu, Ga, In, Zn, NaF,
Fe, Sn
S, Se

Based on many years of active research experience in the field of growth and doping applications our team develops and manufactures the OCTOPLUS 500 system and all essential components. Each product is assembled and carefully tested in-house.

We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.