State-of-the-art MBE system for research and production processes
Applications: III/V, II/VI and other heterostructures
12 source ports
Wide range of source options, e.g. effusion cells, gas sources, manipulators
Substrate sizes 2", 3" or 4"; face-down wafer geometry
Strong UHV pumping system
LN2 cooling shroud
In-situ characterization capability
Strong support by PhD MBE experts
The OCTOPLUS 500 system was developed for the growth of high quality III-V heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with up to 12 effusion cells or gas injectors for deposition or surface treatment.
The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.
Outstanding features of the OCTOPLUS 500 are the high reliability and versatility of the system.
The standard version of the OCTOPLUS 500 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.
Additional load-lock or buffer chambers
Wafer transfer system
Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators
Software/hardware control system
Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)
In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer
|Size of deposition chamber
||550 mm I.D.|
||< 5x10-11 mbar|
|Pumping||TSP, ion getter pump, cryopump and/or turbopump|
|Cooling Shroud||LN2 or other cooling liquid on request|
|Substrate heater temperature||up to 800°C, 1000°C or 1400°C|
|Substate size||up to 4"|
|Bakeout temperature||up to 200°C|
|Source ports||12 ports DN63CF and DN100CF|
||effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources|
||soft-acting linear or rotary shutters|
|In-situ monitoring||ion gauge, QCM, pyrometer, RHEED, QMA|
|Sample transfer||linear transfer rod, manual or semi-automatic in face-down geometry|
|Load lock||magazine with 6 or more substrates turbo-pumped|
|MBE control software||Tusker|
|Service||system installation and acceptance testing|
|MBE training||by MBE experts|
|III/V||Ga, In, Al||C, Si doping||As, P, Sb|
|II/VI||Zn, Cd, Be||S, Se, Te||N-doping|
|IV||Ge, Sn, Pb||B, P, Sb doping||Si, Ge|
|GaN||Ga, In, Al||N|
|Metals||Cu, Al, Ni, Co, ...||Pt, Ta, Pd, Mo, W|
|Topological Insulators||Ge, Sn, Te, Bi, GeSb||Se, Te||B|
|Graphene / Silicene||C, Si|
|Oxides||Fe, Ni, Mn, Bi, Eu,
|Thin Film Solar Cells||Cu, Ga, In, Zn, NaF,
Based on many years of active research experience in the field of growth and doping applications our team develops and manufactures the OCTOPLUS 500 system and all essential components. Each product is assembled and carefully tested in-house.
We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.