State-of-the-art MBE system for research and production processes
Applications: III/V, II/VI and other heterostructures
12 source ports
Wide range of source options, e.g. effusion cells, gas sources, manipulators
Substrate sizes 2", 3" or 4"; face-down wafer geometry
Strong UHV pumping system with base pressure < 5x 10-11 mbar
Optimized deposition geometry to achieve both high materials usage for long growth campaigns and layer homogeneity on full 4” substrates.
LN2 cooling shroud
In-situ characterization capability
Strong support by PhD MBE experts
The OCTOPLUS 500 system was developed for the growth of high quality III-V heterostructures on 4-inch Si substrates. The MBE chamber is equipped with up to 12 effusion cells or gas injectors for deposition or surface treatment.
The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.
Outstanding features of the OCTOPLUS 500 are the high reliability and versatility of the system.
Additional load-lock or buffer chambers
Wafer transfer system (linear trolley type or central transfer wafer handler)
Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators
Software/hardware control system
Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)
In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer
Customization to additional process requirements
Two-stage phosphorus recovery system using a GaP compound or white phosphorus cracker source.
Technical data |
|
Size of deposition chamber |
550 mm I.D. |
Base pressure |
< 5x10-11 mbar |
Pumping | TSP, ion getter pump, cryopump and/or turbopump |
Cooling Shroud | LN2 or other cooling liquid on request |
Substrate heater temperature | up to 800°C, 1000°C or 1400°C |
Substate size | up to 4" |
Bakeout temperature | up to 200°C |
Source ports | 6x DN63CF + 6x DN100CF or EBV + 4x DN63CF + 5x DN100CF or 2x EBV + 4x DN63CF + 4x DN100CF |
Source types |
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources |
Shutters |
soft-acting linear or rotary shutters |
In-situ monitoring | ion gauge, QCM, pyrometer, RHEED, QMA |
Sample transfer | linear transfer rod, manual or semi-automatic in face-down geometry |
Load lock | magazine with 6 or more substrates turbo-pumped |
MBE control software | Tusker |
Service | system installation and acceptance testing |
MBE training | by MBE experts |
Effusion Cells WEZ, NTEZ OME, HTEZ |
Sublimation Sources SUKO, SUSI HTS, DECO |
Valved Sources VACS, VGCS VCS, VSCS |
Plasma Sources FMP |
E-Beam Evaporators EBVV, EBVM, EBV |
|
III/V | Ga, In, Al | C, Si doping | As, P, Sb | ||
II/VI | Zn, Cd, Be | S, Se, Te | N-doping | ||
IV | Ge, Sn, Pb | B, P, Sb doping | Si, Ge | ||
GaN | Ga, In, Al | N | |||
Metals | Cu, Al, Ni, Co, ... | Pt, Ta, Pd, Mo, W | |||
Topological Insulators | Ge, Sn, Te, Bi, GeSb | Se, Te | B | ||
Graphene / Silicene | C, Si | ||||
Oxides | Fe, Ni, Mn, Bi, Eu, Ga, ... |
O | |||
Thin Film Solar Cells | Cu, Ga, In, Zn, NaF, Fe, Sn |
S, Se |
Based on many years of active research experience in the field of growth and doping applications our team develops and manufactures the OCTOPLUS 500 system and all essential components. Each product is assembled and carefully tested in-house.
We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.