Si/SiGe(Sn) epitaxial growth or metal deposition MBE System


System Octoplus 600 EBV
  • Ideally suited for Si/SiGe(Sn) epitaxial growth or metal deposition
  • Up to 12 source ports: 2 ports DN250CF (O.D. 12") / DN300CF (O.D. 14"), and 10 ports DN100CF (O.D. 6")

  • Very large capacity e-beam evaporators (Si, Ge), up to 1000 cm3 pocket volume

  • Wide range of effusion cells and other sources

  • Substrate sizes 6" or 8"

  • Strong UHV pumping system with base pressure of 10-11 mbar range, depending on pump configuration

  • Isotopically purified materials available on request (e.g. up to 99.99% 28Si)

  • Automated central wafer transfer

  • Support by experienced PhD MBE experts


The OCTOPLUS 600 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 6 inch Si substrates. Optionally the system can be upgraded to 8 inch wafer size. The MBE chamber is equipped with two electron beam evaporating guns and up to 10 other sources, like effusion cells or gas injectors for deposition or surface treatment.

Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si, Ge and Sn MBE.

Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 600 EBV system and all essential components. Each product is assembled and carefully tested in-house.

The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 600 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.

Outstanding features of the OCTOPLUS 600 EBV are the high reliability and versatility of the system, with automated central wafer transfer.

The OCTOPLUS 600 EBV comprises 10 radially arranged source ports, and two big source ports for large capacity e-beam evaporators with a capacity of up 160 cm3. Up to 1000 cm3 capacity is offered on request.

Layer SiGe(Sn) uniformity of better +/- 1% is typically achieved. Specially developed doping sources for efficient p- and n-type doping are available.

Automated central wafer transfer

Fully automated wafer transfer by central handling arm.


Technical data

Base pressure
< 5x10-11 mbar
Pumping cryopump, TSP, ion getter pump and/or turbopump
Cooling Shroud LN2 or water cooling on request
Substrate heater temperature up to 800°C, 1000°C or 1200°C
Substate size 6"; 8" on request
Bakeout temperature up to 200°C
Source ports up to 10 ports DN100CF plus two ports DN250CF or DN300CF for e-beam evaporators
Source types
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources
soft-acting linear or rotary shutters
In-situ monitoring ion gauge, QCM, pyrometer, RHEED, QMA
Sample transfer automated by central handling in wafer face-down geometry
Load lock magazine with 10 substrates turbo-pumped
MBE control software Tusker
Service system installation and acceptance testing
MBE training by Si MBE PhD experts


We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 600 EBV is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.