Up to 12 source ports: 2 ports DN250CF (O.D. 12") / DN300CF (O.D. 14"), and 10 ports DN100CF (O.D. 6")
Very large capacity e-beam evaporators (Si, Ge), up to 1000 cm3 pocket volume
Wide range of effusion cells and other sources
Substrate sizes 6" or 8"
Strong UHV pumping system with base pressure of 10-11 mbar range, depending on pump configuration
Isotopically purified materials available on request (e.g. up to 99.99% 28Si)
Automated central wafer transfer
Support by experienced PhD MBE experts
The OCTOPLUS 600 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 6 inch Si substrates. Optionally the system can be upgraded to 8 inch wafer size. The MBE chamber is equipped with two electron beam evaporating guns and up to 10 other sources, like effusion cells or gas injectors for deposition or surface treatment.
Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si, Ge and Sn MBE.
Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 600 EBV system and all essential components. Each product is assembled and carefully tested in-house.
The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 600 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.
Outstanding features of the OCTOPLUS 600 EBV are the high reliability and versatility of the system, with automated central wafer transfer.
The OCTOPLUS 600 EBV comprises 10 radially arranged source ports, and two big source ports for large capacity e-beam evaporators with a capacity of up 160 cm3. Up to 1000 cm3 capacity is offered on request.
Layer SiGe(Sn) uniformity of better +/- 1% is typically achieved. Specially developed doping sources for efficient p- and n-type doping are available.
Fully automated wafer transfer by central handling arm.
||< 5x10-11 mbar|
|Pumping||cryopump, TSP, ion getter pump and/or turbopump|
|Cooling Shroud||LN2 or water cooling on request|
|Substrate heater temperature||up to 800°C, 1000°C or 1200°C|
|Substate size||6"; 8" on request|
|Bakeout temperature||up to 200°C|
|Source ports||up to 10 ports DN100CF plus two ports DN250CF or DN300CF for e-beam evaporators|
||effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources|
||soft-acting linear or rotary shutters|
|In-situ monitoring||ion gauge, QCM, pyrometer, RHEED, QMA|
|Sample transfer||automated by central handling in wafer face-down geometry|
|Load lock||magazine with 10 substrates turbo-pumped|
|MBE control software||Tusker|
|Service||system installation and acceptance testing|
|MBE training||by Si MBE PhD experts|
We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 600 EBV is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.