State-of-the-art MBE system for research and production processes
Applications: III/V, II/VI or other material heterostructures
12 source ports
Wide range of source options, e.g. effusion cells, valved sources etc.
Substrate sizes 3x3" or 6”; face-down wafer geometry
Strong UHV pumping system
LN2 cooling shroud
In-situ characterization capability
Strong support by PhD MBE experts
The OCTOPLUS 600 system has been developed for the growth of high quality III-V heterostructures on multi wafer 3x3 inch, or single wafer 6 inch substrate. The MBE chamber is equipped with up to 12 effusion cells and valved crackers for deposition. The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 600 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.
Outstanding features of the OCTOPLUS 600 are the high reliability and versatility of the system.
The standard version of the OCTOPLUS 600 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with wafer magazine, a heated station and the fully automated central transfer allow easy substrate introduction and handling.
Additional load-lock, heated station, or buffer chambers
Fully automated wafer transfer system
Wide range of components like effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators
Software/hardware control system
Pumping system (cryopumps, ion getter pumps, etc.)
In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer
|Size of deposition chamber
||600 mm I.D.|
||< 5x10-11 mbar|
|Pumping||TSP, ion getterpump, cryopump and/or turbopump|
|Cooling Shroud||LN2 or other cooling liquid on request|
|Substrate heater temperature||up to 800°C, 1000°C or 1200°C|
|Substate size||up to 6" or multi-wafer 3x3"|
|Bakeout temperature||up to 200°C|
|Source ports||12 ports DN63CF and DN100CF|
||effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources|
||soft-acting linear shutters with low flux transient|
|In-situ monitoring||ion gauge, QCM, pyrometer, RHEED, QMA|
|Sample transfer||automated transfer with wafer face-down geometry|
|Load lock||magazine with 10 substrates turbo-pumped|
|MBE control software||Tusker|
|Service||system installation and acceptance testing|
|MBE training||by MBE experts|
|III/V||Ga, In, Al||C, Si doping||As, P, Sb|
|II/VI||Zn, Cd, Be||S, Se, Te||N-doping|
|IV||Ge, Sn, Pb||B, P, Sb doping||Si, Ge|
|GaN||Ga, In, Al||N|
|Metals||Cu, Al, Ni, Co, ...||Pt, Ta, Pd, Mo, W|
|Topological Insulators||Ge, Sn, Te, Bi, GeSb||Se, Te||B|
|Graphene / Silicene||C, Si|
|Oxides||Fe, Ni, Mn, Bi, Eu,
|Thin Film Solar Cells||Cu, Ga, In, Zn, NaF,
Based on many years of active research experience in the field of growth and doping applications our team develops and manufactures the OCTOPLUS 600 system and all essential components. Each product is assembled and carefully tested in-house.
We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 600 is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.