OCTOPLUS 600, MBE Systems


III/V, II/VI and other materials MBE System


System Octoplus 600
MBE system OCTOPLUS 600
  • State-of-the-art MBE system for research and production

  • Applications: III/V, II/VI or other material heterostructures

  • 12 source ports

  • Wide range of source options, e.g. effusion cells, valved sources etc.

  • Substrate sizes 4", 6" or 3x2"; face-down wafer geometry

  • Automated wafer transfer

  • Strong UHV pumping system

  • LN2 cooling shroud

  • In-situ characterization capability

  • Strong support by PhD MBE experts

Data SheetDownload Icon


The OCTOPLUS 600 system has been developed for the growth of high quality III-V heterostructures on multi wafer 3x2 inch or single wafer 4 inch or 6 inch substrate. The MBE chamber is equipped with up to 12 effusion cells and valved crackers for deposition. The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 600 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.

Outstanding features of the OCTOPLUS 600 are the high reliability and versatility of the system.

The standard version of the OCTOPLUS 600 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with wafer magazine, a heated station and the fully automated central transfer allow easy substrate introduction and handling.

wafer transfer
Fully automated wafer transfer by central handling arm.


Options for OCTOPLUS 600:

  • Additional load-lock, heated station, or buffer chambers

  • Fully automated wafer transfer system

  • Wide range of components like effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators

  • Software/hardware control system

  • Pumping system (cryopumps, ion getter pumps, etc.)

  • In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer


Technical data

Size of deposition chamber
600 mm I.D.
Base pressure
< 5x10-11 mbar
Pumping TSP, ion getterpump, cryopump and/or turbopump
Cooling Shroud LN2 or other cooling liquid on request
Substrate heater temperature up to 800°C, 1000°C or 1200°C
Substate size 4",  6" or multi-wafer 3x2"
Bakeout temperature up to 200°C
Source ports 12 ports DN63CF and DN100CF
Source types
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources
soft-acting linear shutters with low flux transient
In-situ monitoring ion gauge, QCM, pyrometer, RHEED, QMA
Sample transfer automated transfer with wafer face-down geometry
Load lock magazine with 10 substrates turbo-pumped
MBE control software Tusker
Service system installation and acceptance testing
MBE training by MBE experts

Examples for applications and corresponding sources

Effusion Cells
Sublimation Sources
Valved Sources
Plasma Sources

III/V Ga, In, Al C, Si doping As, P, Sb
II/VI Zn, Cd, Be S, Se, Te N-doping
IV Ge, Sn, Pb B, P, Sb doping Si, Ge
GaN Ga, In, Al N
Metals Cu, Al, Ni, Co, ... Pt, Ta, Pd, Mo, W
Topological Insulators Ge, Sn, Te, Bi, GeSb Se, Te B
Graphene / Silicene C, Si
Oxides Fe, Ni, Mn, Bi, Eu,
Ga, ...
Thin Film Solar Cells Cu, Ga, In, Zn, NaF,
Fe, Sn
S, Se

Based on many years of active research experience in the field of growth and doping applications our team develops and manufactures the OCTOPLUS 600 system and all essential components. Each product is assembled and carefully tested in-house.

We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 600 is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.