OCTOPLUS-O 400, MBE Systems

OCTOPLUS-O 400

Oxide MBE System

 

Octoplus-O 400
MBE system OCTOPLUS-O 400
  • Oxide MBE System with dual zone design

  • Applications for many oxide and metal materials

  • 9 MBE source ports DN63CF (O.D. 4.5"), extendible to 12 ports

  • Wide range of source options; compatible to multi-pocket e-beam evaporation

  • Small samples or wafer sizes up to 2"

  • Strong differential pumping

  • Ozone-resistant SiC substrate heater
    or CO2 laser substrate heating

  • Ozone injection close to substrate

  • In-situ characterization capability

  • Strong support by PhD MBE experts

Download IconData Sheet

 

The OCTOPLUS-O 400 is very thoroughly designed for oxide layer deposition. The unique dual zone design with effective differential pumping allows depositing oxide layers in high Oxygen or Ozone partial pressure without strong degeneration of the hot sources. The OCTOPLUS-O 400 system can be easily adapted to small wafer segments as well as to 2 inch wafers. The field-proven vertical chamber design of the OCTOPLUS-O 400 plus various state-of-the-art components allow layer by layer precise MBE growth.

Outstanding features of the OCTOPLUS-O 400 are the unique dual zone design, high reliability and versatility of the system and its compactness. These features make our systems particularly suited for applications in research and development. Nonetheless specific production processes are also covered.

The standard version of the OCTOPLUS-O 400 comprises 9 source ports 4.5 inch (DN63CF) flange size. A rapid pump-down load lock chamber with a horizontal working transfer rod system allows easy substrate introduction without breaking the vacuum of the MBE chamber.

Options for OCTOPLUS-O 400:

  • Additional load-lock and buffer chambers

  • Wafer transfer system

  • Sources: effusion cells, (multi-pocket) e-beam evaporators, etc.

  • Retractable sources for reloading without chamber venting

  • Upgrade from 9 ports up to 12 ports

  • Multiple turbomolecular pumps for differential pumping

  • Ozone source with or without enrichment

  • Oxygen plasma source

  • Software / hardware control system

  • In-situ characterization tools, e.g. ion gauge, quartz, pyrometer, RHEED, QMA

Ozone Source
Compact Ozone Source without enrichment up to 15% O3

We provide different kinds of effusion cells, valved cracker sources, gas sources and substrate manipulators according to customers' requirements.

CO2 laser heating allows substrate heating up to more than 1400°C.
A backside metal coating of the substrate is not needed, since the CO2 laser light is strongly absorbed by various oxide substrates.
Please see corresponding paper.

A well-manageable in-situ characterization is obtained by using quartz micro-balance, RHEED systems or quadrupole mass analyzers (QMA).

CO2 substrate heating
Al2O3 substrate heated by CO2 laser. (Courtesy of Prof. J. Mannhart, MPI-FKF Stuttgart)


We are happy to discuss your MBE system specifications and give competent advice for your application. Do not hesitate to contact us.

The OCTOPLUS-O 400 is in use in leading laboratories. On demand we transmit a detailed list of references.

Zone 1 (blue coloring):

  • Oxide deposition area

  • High O2 and O3 partial pressure

  • Ozone injector ring close to substrate

  • Short distance of Ozone injector to substrate

  • Low Ozone consumption

  • Ozone resistant SiC heater

  • Strong differential turbo pumping


Zone 2 (yellow coloring):

  • Source area

  • Low pressure due to small opening towards zone 1

  • Separate strong turbo pump

  • Pressure significantly lower than in zone 1

  • Shutters with low flux transient

  • Low efficient individual differential pumping of each source not needed

  • Integration of multi-pocket e-beam evaporator possible

Schematic Octoplus-O 400

Schematic of OCTOPLUS-O 400 Oxide MBE System


Technical data

Size of deposition chamber
450 mm I.D.
Base pressure
< 5x10-11 mbar (depends on pumping system)
Pumping cryopump, turbopump, TSP or ion getter pump
Cooling Shroud LN2 or other cooling liquid on request
Substrate heater temperature up to 800°C, 1000°C or 1400°C
Substate size up to 2" diameter
Bakeout temperature up to 200°C
Source ports 9 source ports DN63CF (O.D. 4.5")
Source types
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources
Shutters
soft-acting linear or rotary shutters
In-situ monitoring ion gauge, QCM, pyrometer, RHEED, QMA
Sample transfer linear transfer rod, manual or semi-automatic
Load lock turbo-pumped, magazine with 6 substrates
MBE control software Tusker
Service system installation and acceptance testing
MBE training by MBE experts

 

Examples for applications and corresponding sources

Effusion Cells
WEZ, NTEZ
HTEZ
Sublimation Sources
SUKO, SUSI
HTS, DECO
Ozone Sources
O3S
Plasma Sources

E-Beam
Evaporators
EBVV, EBVM
Oxides Fe, Ni, Mn, Bi, Eu, Ga, ... C Ozone O Ir, La, Ni, Ru, Mo, Ta, W, Nb, ...

 

Octoplus-O 400 general view

Product range and quality of Dr. Eberl MBE-Komponenten GmbH benefit from the many years of active research experience of its team members. We now look back on about 30 years of development and manufacture of complex systems and components for multiple tasks in the applied research and production of compound semiconductor materials. Each product is assembled and carefully tested in-house by our MBE experts.