The Carbon Doping Source SUKO-D is a highly optimized doping source for carbon p-type doping in III-V MBE.
Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.
The Phosphorus Doping source DECO-D is an ultra pure source for P2, based on the decomposition of GaP.
Excellent growth of thin silicon layers, short period Si/Ge superlattices and Si/SiGe heterostructures by means of high purity intrinsic or highly doped Si filament.