The Silicon Sublimation Source SUSI was developed for growing thin Si layers, short period Si/Ge superlattices and Si/SiGe heterostructures. It allows for growth of thin epitaxial Si layers with a crystal quality not otherwise possible by evaporation
We provide suitable power and thermocouple extension cables for all our products. Ready-to-connect cable sets consist of power cables and TC extension lines including correct plugs and connectors.
Individually designed refractory materials parts of highest quality and purity as well as standard pieces.
The Carbon Doping Source SUKO-D is a highly optimized doping source for carbon p-type doping in III-V MBE.
The SUKO provides clean and stable flux at a low deposition rate of up to 2 Å/min. It has been successfully applied in a variety of research fields, e.g. graphene formation.
Safety system which protects UHV-chambers from contaminations caused by unexpected warming up of the cryopump.
Because of the large variety of different UHV systems each cluster is individually designed. If your requirements are more specialized than our standard Cluster Sources can provide, please contact us.
Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
The use of source clusters increases the capacity of your UHV-System, by using only a single port for two individual sources.
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.