The Silicon Sublimation Source SUSI was developed for growing thin Si layers, short period Si/Ge superlattices and Si/SiGe heterostructures. It allows for growth of thin epitaxial Si layers with a crystal quality not otherwise possible by evaporation
We provide suitable power and thermocouple extension cables for all our products. Ready-to-connect cable sets consist of power cables and TC extension lines including correct plugs and connectors.
Individually designed refractory material parts like Ta, Mo, Ti and W of highest quality and purity as well as standard pieces.
The Electron Beam Evaporator EBV intends to achieve high growth rates for low vapour pressure materials, especially when high purity of the evaporant is desired.
Our Multi-pocket Electron Beam Evaporators combine flexibility in evaporating up to four different materials from a single source for thin film growth requirements.
The Vertical Electron Beam Evaporator EBVV features a complete electromagnetic x- and y-dynamic beam deflection system with small footprint.
The operation of any electron beam evaporator requires a well-matching set of power supplies and a control unit, in order to generate and guide the electron beam.
The Carbon Doping Source SUKO-D is a highly optimized doping source for carbon p-type doping in III-V MBE.
The SUKO provides clean and stable flux at a low deposition rate of up to 2 Å/min. It has been successfully applied in a variety of research fields, e.g. graphene formation.
Crucible Liner (CRL) and Crucible Targets (CRT) for electron beam evaporators from Dr. Eberl MBE-Komponenten