Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
The use of source clusters increases the capacity of your UHV-System, by using only a single port for two individual sources.
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.
The Decomposition Source DECO is an ultra-pure source for P2 based on the decomposition of GaP. It is an affordable and easily operated alternative to valved phosphorus sources.
The High Temperature Source HTS allows evaporation of high vapor pressure materials, thereby combining very uniform material deposition with high flux rates.
The Hydrogen Atom Beam Source HABS is a thermal gas cracker that produces an absolutely ion-free hydrogen gas beam, avoiding ion induced damage to the substrate.
The industrial point sources OME 100 with fast and precise temperature control are ideal for evaporation of organic materials for PV, display and OLED applications.
Main purpose of the Loadlock Heater WH 40 is the controlled heating of both chamber walls and substrates within a loadlock under ultra-high vacuum conditions.
Manual and remote control of rotation speed, direction of rotation and start/stop is possible. The control signals can be set manually, with TTL signals or with external relays.
The MSCU is the power supply and controller for multi-position shutter modules. You may choose between manual and remote controlled shutter operation.