The Valved Arsenic Cracker Source is designed for high performance growth of III-V materials and combines large crucible capacity with precise and fast flux control.
The Valved Corrosive Material Cracker Source VCCS is designed for controlled injection of radicals of antimony, tellurium, magnesium or other corrosive materials in standard MBE applications.
The VSCS is a valved Selenium cracker source, employed in high efficiency CIGS solar cell growth and other II-VI semiconductor material deposition processes.
The wafer heaters or heated stations - WH - are suited for all substrate heating applications where the full functionality of a substrate manipulator is not required.