Stichwort "molecular beam epitaxy system" in "Stichwort":
molecular beam epitaxy system in deposition stage
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Keywords
Keyword: molecular beam epitaxy system
Stichwort "molecular beam epitaxy system" in "Online Editor":
molecular beam epitaxy system in OCTOPLUS 400 - Dr. Eberl MBE-Komponenten GmbH
OCTOPLUS 400 systems are ideally suited for III-V, II-VI and other compound semiconductor applications. The OCTOPLUS 400 can be adapted to small wafer segments.
OCTOPLUS 400 systems are ideally suited for III-V, II-VI and other compound semiconductor applications. The OCTOPLUS 400 can be adapted to small wafer segments.
molecular beam epitaxy system in OCTOPLUS 500 - Dr. Eberl MBE-Komponenten GmbH
The OCTOPLUS 500 system was developed for the growth of high quality III-V and II/VI heterostructures on 4 inch or 6 inch Si substrates.
The OCTOPLUS 500 system was developed for the growth of high quality III-V and II/VI heterostructures on 4 inch or 6 inch Si substrates.
molecular beam epitaxy system in Wafer Heater WH - Dr. Eberl MBE-Komponenten GmbH
The wafer heaters or heated stations - WH - are suited for all substrate heating applications where the full functionality of a substrate manipulator is not required.
The wafer heaters or heated stations - WH - are suited for all substrate heating applications where the full functionality of a substrate manipulator is not required.
molecular beam epitaxy system in OCTOPLUS 300 - Dr. Eberl MBE-Komponenten GmbH
The OCTOPLUS 300 system is ideally suited for material deposition onto small samples. It ensures a good accessability and easy operation and maintenance.
The OCTOPLUS 300 system is ideally suited for material deposition onto small samples. It ensures a good accessability and easy operation and maintenance.
molecular beam epitaxy system in OCTOPLUS-O 400 - Dr. Eberl MBE-Komponenten GmbH
The OCTOPLUS-O 400 MBE system features a unique dual zone design with differential pumping that allows depositing oxide layers under high partial pressure.
The OCTOPLUS-O 400 MBE system features a unique dual zone design with differential pumping that allows depositing oxide layers under high partial pressure.
molecular beam epitaxy system in OCTOPLUS 500 EBV - Dr. Eberl MBE-Komponenten GmbH
The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch or 6 inch Si substrates.
The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch or 6 inch Si substrates.
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