Glossary
Glossary
Epitaxial deposition of strained heterostructures. For example SiGe deposited on Si substrate. Or GaInAs on GaAs substrate. In these cases the epitaxial layer is laterally strained to match the lattice constant of the substrate. The strained epitaxial layer starts to relax by formation of misfit dislocations if a critical film thickness is exceeded.
 
 
 
 

We use cookies for means of optimal presentation and current improvement of our website. By using our website, you agree with our use of cookies. Find out how to manage cookies and view our privacy policy here.