Compact and versatile MBE system for R&D
Applications: III-V, II-VI or HgCdTe epitaxy
10 source ports, various options including e-beam evaporators
Wide range of source options
Horizontal substrates up to 3''
UHV pumping system with base pressure < 5 x 10-11 mbar
Ease of use and maintenance
In-situ characterization capability
Strong support by PhD MBE experts
The OCTOPLUS 400 system is ideally suited for III-V, II-VI and other compound semiconductor material applications.The OCTOPLUS 400 system can be easily adapted to small wafer segments as well as to 1, 2 or 3 inch wafers. The field-proven vertical chamber design of the OCTOPLUS 400 plus various state-of-the-art components allow layer by layer precise MBE growth.
Outstanding features of the OCTOPLUS 400 are the high reliability and versatility of the system and its compactness. These features make the OCTOPLUS 400 system particularly suited for applications in research and development. Nonetheless specific production processes are also covered.
The standard version of the OCTOPLUS 400 comprises 8 source ports with 4.5 inch (DN63CF) flange size. Up to 10 source ports are possible in a custom designed version on request. A rapidly pump-down load lock chamber with a horizontal working transfer rod system allows easy substrate introduction without breaking the vacuum of the MBE chamber.
We provide different kinds of effusion cells, valved cracker sources, gas sources and substrate manipulators according to all our customers' requirements. A well-manageable in-situ characterization is obtained by using beam-flux-gauges, RHEED systems or quadrupole mass analyzers (QMA). The proven MBE software EpiSoft controls all shutters, cell- and manipulator temperatures, the chamber pressure and cyropump temperatures. Maximum operation reproducibility and safety is guaranteed.
We are happy to discuss your MBE system specifications and give competent advice for your application. Do not hesitate to contact us.
The OCTOPLUS 400 is in use in leading laboratories. On demand we transmit a detailed list of references.
Options for OCTOPLUS 400:
Additional load-lock or buffer chambers
Wafer transfer system
Effusion cells, source clusters, valved or gas sources, manipulators, power supplies and control units
Upgrade from 8 ports up to 10 ports
Pumping system (ion getter pumps, turbopumps, cryopumps etc.)
Software / hardware control system
In-situ characterization tools, e.g. ion gauge, quartz, pyrometer, RHEED, QMA
|Size of deposition chamber
||450 mm I.D.|
||< 5x10-11 mbar|
|Pumping||Cryopump, Turbopump, TSP or Ion Getter Pump|
|Cooling Shroud||LN2 or other cooling liquid on request|
|Substrate heater temperature||up to 800°C, 1000°C or 1400°C|
|Substate size||up to 3" diameter|
|Bakeout temperature||up to 200°C|
|Source ports||up to 10 ports DN63CF and DN100CF|
||effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources|
||soft-acting linear or rotary shutters|
|In-situ monitoring||ion gauge, quartz, pyrometer, RHEED, QMA|
|Sample transfer||linear transfer rod, manual or semi-automatic|
|Load lock||magazine with 6 substrates turbo-pumped|
|MBE control software||EpiSoft|
|Included||system installation and acceptance testing|
|MBE training||by MBE expert|
|III/V||Ga, In, Al, Be||C, Si doping||As, P, Sb|
|II/VI||Zn, Cd, Be||S, Se, Te||N-doping|
|IV||Ge, Sn, Pb||B, P, Sb doping||Si, Ge|
|GaN||Ga, In, Al||N|
|Metals||Cu, Al, Ni, Co, ...||Pt, Ta, Pd, Mo, W|
|Topological Insulators||Ge, Sn, Te, Bi, GeSb||Se, Te||B|
|Graphene / Silicene||C, Si|
|Oxides||Fe, Ni, Mn, Bi, Eu,
|Thin Film Solar Cells||Cu, Ga, In, Zn, NaF,
The product range and quality of Dr. Eberl MBE-Komponenten GmbH benefit from many years of active research experience of its team members.
We now look back on over 25 years of developing and manufacturing of complex systems and components for multiple tasks in the applied research and production of compound semiconductor materials. Each product is assembled and carefully tested in-house by our MBE experts.