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Molekularstrahlepitaxie - Keyword
Keywords
Keyword: Molekularstrahlepitaxie
Stichwort "Molekularstrahlepitaxie" in "Stichwort":
Stichwort "Molekularstrahlepitaxie" in "Online Editor":
Molekularstrahlepitaxie in OCTOPLUS 400 - Dr. Eberl MBE-Komponenten GmbH OCTOPLUS 400 systems are ideally suited for III-V, II-VI and other compound semiconductor applications. The OCTOPLUS 400 can be adapted to small wafer segments.
Molekularstrahlepitaxie in OCTOPLUS 500 - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS 500 system was developed for the growth of high quality III-V and II/VI heterostructures on 4 inch or 6 inch Si substrates.
Molekularstrahlepitaxie in Thin Film Systems - Dr. Eberl MBE-Komponenten GmbH Our versatile thin film deposition system is based on the OCTOPLUS 500 chamber and ideally suited for PVD applications, including CIGS, CdTe and kesterites.
Molekularstrahlepitaxie in MBE-Components - Dr. Eberl MBE-Komponenten GmbH Substrate manipulators, effusion cells, source clusters, doping cells, valved sources, e-beam evaporators, gas sources and proper equipment for R&D and industrial MBE applications.
Molekularstrahlepitaxie in OCTOPLUS 300 - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS 300 system is ideally suited for material deposition onto small samples. It ensures a good accessability and easy operation and maintenance.
Molekularstrahlepitaxie in OCTOPLUS-O 400 - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS-O 400 MBE system features a unique dual zone design with differential pumping that allows depositing oxide layers under high partial pressure.
Molekularstrahlepitaxie in OCTOPLUS 500 EBV - Dr. Eberl MBE-Komponenten GmbH The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch or 6 inch Si substrates.