Octoplus 500-EBV, MBE Systems

OCTOPLUS 500 EBV

Si/SiGe, Metals, Magnetics, Oxides, Topological Insulators MBE System 

System Octoplus 500 EBV
  • State-of-the-art SiGe and other materials MBE system

  • Ideally suited for Si/SiGe epitactical growth or metal deposition

  • Up to 10 source ports: 2 ports DN250CF (O.D. 12"), 8 ports DN63CF (O.D. 4.5") and DN100CF (O.D. 6")

  • Large capacity e-beam evaporators, wide range of effusion cells and gas sources

  • Substrate sizes 3", 4" or  6'' 

  • Strong UHV pumping system (TSP, ion getter, cryo and/or turbo pump)

  • LN2 cooling shroud

  • In-situ characterization capability

  • Strong support by PhD MBE experts

MBE system OCTOPLUS 500 EBV Data SheetDownload Icon

The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with two electron beam evaporating guns and up to 8 effusion cells or gas injectors for deposition or surface treatment.

Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si and Ge MBE. 
Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 500 EBV system and all essential components. Each product is assembled and carefully tested in-house.

The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.

Outstanding features of the OCTOPLUS 500 EBV are the high reliability and versatility of the system.

The standard version of the OCTOPLUS 500 EBV comprises 10 radially arranged source ports, from which we recommend 8 ports to be used for effusion cells, sublimation sources or comparable components. Two large ports DN250CF are provided for e-beam evaporation guns. The e-beam evaporator can also be a multi-pocket version EBVM.
A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.

Options for OCTOPLUS 500 EBV:

  • Additional load-lock or buffer chambers

  • Wafer transfer system

  • Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators

  • Software / hardware control system

  • Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)

  • In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer

  • Additional requirements


Technical data

Size of deposition chamber
550 mm I.D.
Base pressure
< 5x10-11 mbar
Pumping TSP, Ion Getter Pump, Cryopump and/or Turbopump
Cooling Shroud LN2 or other cooling liquid on request
Substrate heater temperature up to 800°C, 1000°C or 1400°C
Substate size up to 6" diameter or 7"x2"
Bakeout temperature up to 200°C
Source ports up to 8 ports DN63CF and DN100CF plus two DN250CF for e-beam evaporators
Source types
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources
Shutters
soft-acting linear or rotary shutters
In-situ monitoring ion gauge, quartz, pyrometer, RHEED, QMA
Sample transfer linear transfer rod, manual or semi-automatic in face-down geometry
Load lock magazine with 8 substrates turbo-pumped
MBE control software EpiSoft or other
Included system installation and acceptance testing
MBE training by MBE expert


Examples for applications and corresponding sources

Effusion Cell
WEZ, NTEZ
OME, HTEZ
Sublimation Source
SUKO, SUSI
HTS, DECO
Valved Source
VACS, VGCS
VCS, VSCS
Plasma Source

E-Beam
Evaporator
EBVV
III/V Ga, In, Al C, Si doping As, P, Sb
II/VI Zn, Cd, Be S, Se, Te N-doping
IV Ge, Sn, Pb B, P, Sb doping Si, Ge
GaN Ga, In, Al N
Metals Cu, Al, Ni, Co, ... Pt, Ta, Pd, Mo, W
Topological Insulators Ge, Sn, Te, Bi, GeSb Se, Te B
Graphene / Silicene C, Si
Oxides Fe, Ni, Mn, Bi, Eu,
Ga, ...
O
Thin Film Solar Cells Cu, Ga, In, Zn, NaF,
Fe, Sn
S, Se


We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 EBV is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.