Nano- and Opto-Electronics, Dopant Cells

Dopant Cells

Doping Effusion Cells EZDoping Effusion
Cells
EZ
Silicon Doping Source SUSI-DSilicon Doping
Source
SUSI-D
Dual Doping Sources DCSDual Doping
Source
DDS
Carbon Doping Source SUKO-DCarbon Doping
Source
SUKO-D
Phosphorus Doping Sources DECOPhosphorus Doping Source
DECO-D

Select doping cell by dopant material:

Bulkmaterial Dopant Type Source Comment
GaAs / AlGaAs Si n EZ
Si n SUSI-D high mobility doping, fast switching
Te n EZ GaTe source material, T=700°C -> 1019cm3
Be p EZ
C p SUKO-D high mobility p-type doping
Si / SiGe Sb n EZ segregation effect
As n EZ high segregation effect in MBE
P n DECO-D GaP source material, T=700°C -> 1019cm3
B p HTS
Ga p EZ
Al p EZ segregates in MBE
Er opt. EZ used for light emission
GaN / GaInN Si n EZ
Si n SUSI long filament lifetime / Si flux option
Mg p EZ
Zn p EZ high activation energy
GaP / GaAsP S n OME, valved source please contact us
Te n EZ use GaTe as source material
Zn p EZ
SiC N n plasma source please contact us
Al p EZ
ZnO B n HTS
N p plasma source please contact us
ZnSe I n valved source valved source / please contact us
ZnCl2 n gas injector valved source / please contact us
N p plasma source please contact us
CdTe Al n EZ
Cu p EZ
Sb p EZ
Other Fe HTEZ
Cr HTEZ
Cu EZ
 
 
 

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